UPA2825T1S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: UPA2825T1S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 24 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 1 V
   Qgⓘ - Carga de la puerta: 57 nC
   trⓘ - Tiempo de subida: 86 nS
   Cossⓘ - Capacitancia de salida: 850 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0046 Ohm
   Paquete / Cubierta: HWSON8

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UPA2825T1S Datasheet (PDF)

..1. Size:192K renesas
upa2825t1s.pdf

Preliminary Data Sheet PA2825T1S R07DS0755EJ0100Rev.1.00May 25, 2012MOS FIELD EFFECT TRANSISTOR Description The PA2825T1S is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25C) Low on-state resistance RDS(on) = 4.6 m MAX. (VGS

8.1. Size:189K renesas
upa2820t1s.pdf

Preliminary Data Sheet PA2820T1S R07DS0751EJ0100Rev.1.00May 25, 2012MOS FIELD EFFECT TRANSISTOR Description The PA2820T1S is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25C) Low on-state resistance RDS(on) = 5.3 m MAX. (VGS

8.2. Size:138K renesas
upa2822t1l.pdf

Data SheetPA2822T1L R07DS0754EJ0100Rev.1.00May 25, 2012MOS FIELD EFFECT TRANSISTOR Description The PA2822T1L is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25C) Low on-state resistance RDS(on) = 2.6 m MAX. (VGS = 10 V, ID =

8.3. Size:143K renesas
upa2821t1l.pdf

PreliminaryData Sheet PA2821T1L R07DS0753EJ0100Rev.1.00May 25, 2012MOS FIELD EFFECT TRANSISTOR Description The PA2821T1L is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25C) Low on-state resistance RDS(on) = 3.8 m MAX. (VGS

8.4. Size:209K renesas
upa2826t1s.pdf

Data SheetPA2826T1S N-channel MOSFET R07DS0989EJ0100Rev.1.0020 V , 27 A , 4.3 m Dec 25, 2012Description The PA2826T1S is N-channel MOS Field Effect Transistor designed for power management applications of portable equipment . Features VDSS = 20 V (TA = 25C) Low on-state resistance RDS(on) = 4.3 m MAX. (VGS = 8.0 V, ID = 13.5 A) 2.5 V Gate-d

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