UPA2825T1S Todos los transistores

 

UPA2825T1S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: UPA2825T1S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 24 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 86 nS
   Cossⓘ - Capacitancia de salida: 850 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0046 Ohm
   Paquete / Cubierta: HWSON8
 

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UPA2825T1S Datasheet (PDF)

 ..1. Size:192K  renesas
upa2825t1s.pdf pdf_icon

UPA2825T1S

Preliminary Data Sheet PA2825T1S R07DS0755EJ0100Rev.1.00May 25, 2012MOS FIELD EFFECT TRANSISTOR Description The PA2825T1S is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25C) Low on-state resistance RDS(on) = 4.6 m MAX. (VGS

 8.1. Size:189K  renesas
upa2820t1s.pdf pdf_icon

UPA2825T1S

Preliminary Data Sheet PA2820T1S R07DS0751EJ0100Rev.1.00May 25, 2012MOS FIELD EFFECT TRANSISTOR Description The PA2820T1S is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25C) Low on-state resistance RDS(on) = 5.3 m MAX. (VGS

 8.2. Size:138K  renesas
upa2822t1l.pdf pdf_icon

UPA2825T1S

Data SheetPA2822T1L R07DS0754EJ0100Rev.1.00May 25, 2012MOS FIELD EFFECT TRANSISTOR Description The PA2822T1L is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25C) Low on-state resistance RDS(on) = 2.6 m MAX. (VGS = 10 V, ID =

 8.3. Size:143K  renesas
upa2821t1l.pdf pdf_icon

UPA2825T1S

PreliminaryData Sheet PA2821T1L R07DS0753EJ0100Rev.1.00May 25, 2012MOS FIELD EFFECT TRANSISTOR Description The PA2821T1L is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25C) Low on-state resistance RDS(on) = 3.8 m MAX. (VGS

Otros transistores... UPA2812T1L , UPA2813T1L , UPA2814T1S , UPA2815T1S , UPA2816T1S , UPA2820T1S , UPA2821T1L , UPA2822T1L , IRFB7545 , UPA2826T1S , UPA3753GR , UPA503CT , UPA572CT , UPA573CT , UPA602CT , UPA603CT , UPA621TT .

 

 
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