APM3009NG Todos los transistores

 

APM3009NG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APM3009NG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 62.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO263

 Búsqueda de reemplazo de MOSFET APM3009NG

 

APM3009NG Datasheet (PDF)

 6.1. Size:723K  anpec
apm3009n.pdf

APM3009NG
APM3009NG

APM3009N N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/70A , RDS(ON)=7m(typ.) @ VGS=10VRDS(ON)=11m(typ.) @ VGS=4.5V Super High Dense Advanced Cell Design forExtremely Low RDS(ON) Reliable and Rugged1 2 3 TO-220 , TO-252 and TO-263 PackagesG D SApplications Top View of TO-220, TO

 6.2. Size:845K  cn vbsemi
apm3009nuc.pdf

APM3009NG
APM3009NG

APM3009NUCwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSO

 9.1. Size:184K  anpec
apm3095pu.pdf

APM3009NG
APM3009NG

APM3095PUP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-8A, RDS(ON)=95m (typ.) @ VGS=-10VG D RDS(ON)=140m (typ.) @ VGS=-4.5V Super High Dense Cell DesignS Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)SApplications Power Management in Desktop Computer orG DC/DC ConvertersDP-Channel MOSFETOrdering and

 9.2. Size:212K  anpec
apm3023n.pdf

APM3009NG
APM3009NG

APM3023N N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/30A, RDS(ON)=15m(typ.) @ VGS=10VRDS(ON)=22m(typ.) @ VGS=5V Super High Dense Cell Design1 2 31 2 3 High Power and Current Handling CapabilityG D S TO-252.TO-220 and SOT-223 Packages G D S Top View of SOT-223 Top View of TO-25

 9.3. Size:310K  anpec
apm3055l.pdf

APM3009NG
APM3009NG

APM3055LN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/12A, RDS(ON)=100m(max) @ VGS=10VRDS(ON)=200m(max) @ VGS=4.5V Super High Dense Cell Design High Power and Current Handling Capability 1 2 31 2 3 TO-252 and SOT-223 PackagesG D SG D SApplications Top View of TO-252 Top View

 9.4. Size:173K  sino
apm3095pu.pdf

APM3009NG
APM3009NG

APM3095PU P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-8A,D RDS(ON)=95m (typ.) @ VGS=-10VSRDS(ON)=140m (typ.) @ VGS=-4.5VG 100% UIS + Rg Tested Reliable and Rugged Top View of TO-252-2 Lead Free and Green Devices Available(RoHS Compliant)D ESD ProtectionApplicationsG Power Management in Desktop Computer or DC/DC Converters.

 9.5. Size:1441K  cn vbsemi
apm3054nuc.pdf

APM3009NG
APM3009NG

APM3054NUCwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABS

 9.6. Size:1438K  cn vbsemi
apm3040ndc.pdf

APM3009NG
APM3009NG

APM3040NDCwww.VBsemi.tw N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.022 at VGS = 4.5 V 6.8RoHS30 10 nC COMPLIANTAPPLICATIONS0.027 at VGS = 2.5 V 6.0 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwis

 9.7. Size:843K  cn vbsemi
apm3055luc.pdf

APM3009NG
APM3009NG

APM3055LUCwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABS

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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