APM3009NU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APM3009NU
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 50 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 60 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 7 nS
Conductancia de drenaje-sustrato (Cd): 500 pF
Resistencia entre drenaje y fuente RDS(on): 0.009 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET APM3009NU
APM3009NU Datasheet (PDF)
apm3009nuc.pdf
APM3009NUCwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSO
apm3009n.pdf
APM3009N N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/70A , RDS(ON)=7m(typ.) @ VGS=10VRDS(ON)=11m(typ.) @ VGS=4.5V Super High Dense Advanced Cell Design forExtremely Low RDS(ON) Reliable and Rugged1 2 3 TO-220 , TO-252 and TO-263 PackagesG D SApplications Top View of TO-220, TO
apm3095pu.pdf
APM3095PUP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-8A, RDS(ON)=95m (typ.) @ VGS=-10VG D RDS(ON)=140m (typ.) @ VGS=-4.5V Super High Dense Cell DesignS Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)SApplications Power Management in Desktop Computer orG DC/DC ConvertersDP-Channel MOSFETOrdering and
apm3023n.pdf
APM3023N N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/30A, RDS(ON)=15m(typ.) @ VGS=10VRDS(ON)=22m(typ.) @ VGS=5V Super High Dense Cell Design1 2 31 2 3 High Power and Current Handling CapabilityG D S TO-252.TO-220 and SOT-223 Packages G D S Top View of SOT-223 Top View of TO-25
apm3055l.pdf
APM3055LN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/12A, RDS(ON)=100m(max) @ VGS=10VRDS(ON)=200m(max) @ VGS=4.5V Super High Dense Cell Design High Power and Current Handling Capability 1 2 31 2 3 TO-252 and SOT-223 PackagesG D SG D SApplications Top View of TO-252 Top View
apm3095pu.pdf
APM3095PU P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-8A,D RDS(ON)=95m (typ.) @ VGS=-10VSRDS(ON)=140m (typ.) @ VGS=-4.5VG 100% UIS + Rg Tested Reliable and Rugged Top View of TO-252-2 Lead Free and Green Devices Available(RoHS Compliant)D ESD ProtectionApplicationsG Power Management in Desktop Computer or DC/DC Converters.
apm3054nuc.pdf
APM3054NUCwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABS
apm3040ndc.pdf
APM3040NDCwww.VBsemi.tw N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.022 at VGS = 4.5 V 6.8RoHS30 10 nC COMPLIANTAPPLICATIONS0.027 at VGS = 2.5 V 6.0 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwis
apm3055luc.pdf
APM3055LUCwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABS
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
