SI4856DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI4856DY
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
   Paquete / Cubierta: SO8

Búsqueda de reemplazo de MOSFET SI4856DY

SI4856DY Datasheet (PDF)

..1. Size:45K vishay
si4856dy.pdf

Si4856DYNew ProductVishay SiliconixN-Channel 30-V MOSFETFEATURESD TrenchFETr Power MOSFETSPRODUCT SUMMARYD 100% RG TestedVDS (V) rDS(on) (W) ID (A)APPLICATIONS0.006 @ VGS = 10 V 17D Buck Converter3030D Synchronous Rectifier0.0085 @ VGS = 4.5 V 14- Secondary RectifierDSO-8SD1 8S D2 7GSD3 6G D4 5Top View SN-Channel MOSFETABSOLUTE MAXIMUM

8.1. Size:97K vishay
si4856ady.pdf

Si4856ADYNew ProductVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESD TrenchFETr Power MOSFETSPRODUCT SUMMARYD 100% Rg TestedVDS (V) rDS(on) (W) ID (A) Qg (Typ)APPLICATIONS0.0052 @ VGS = 10 V 17D Buck Converter30 2130 210.0076 @ VGS = 4.5 V 14D Synchronous Rectifier- Secondary RectifierSO-8DSD1 8S D2 7SD3 6G D4 5 GTop ViewSOrdering In

9.1. Size:289K vishay
si4850bdy.pdf

Si4850BDYwww.vishay.comVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESSO-8 SingleD TrenchFET Gen IV power MOSFETD 5D 6 100 % Rg and UIS testedD 7 Material categorization:8for definitions of compliance please see www.vishay.com/doc?999124APPLICATIONS DG33 Synchronous rectification SS22SS11 Primary side switchS

9.2. Size:243K vishay
si4850ey.pdf

Si4850EYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.022 at VGS = 10 V 8.5 TrenchFET Power MOSFETs600.031 at VGS = 4.5 V 7.2 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSO-8 SD1 8 SD2 7

9.3. Size:72K vishay
si4852dy.pdf

Si4852DYVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodePRODUCT SUMMARYFEATURESVDS (V) rDS(on) (W) ID (A)D LITTLE FOOTr Plus0.0120 @ VGS = 10 V 11D 100% Rg Tested30300.0175 @ VGS = 4.5 V 9.5SCHOTTKY PRODUCT SUMMARYVSD (v)VDS (V) Diode Forward Voltage IF (A)30 0.53 V @ 3 A 4SO-8DSD1 8S D2 7SD3 6 Schottky DiodeGG D4 5Top ViewS

9.4. Size:246K vishay
si4850ey-t1 si4850ey.pdf

9.5. Size:75K vishay
si4854dy.pdf

Si4854DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodePRODUCT SUMMARYFEATURESVDS (V) rDS(on) (W) ID (A)D LITTLE FOOTr PlusDual TrenchFETr0.026 @ VGS = 10 V 6.9Power MOSFET Plus Integrated Schottky30 0.030 @ VGS = 4.5 V 6.4 DiodeD PWM Optimized for Faster Swtiching0.041 @ VGS = 2.5 V 5.5D 100% Rg TestedSCHOTTKY PRODUCT SUMMARYAPPLICATIONSVSD

9.6. Size:224K vishay
si4858dy.pdf

Si4858DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.00525 at VGS = 10 V 20 TrenchFET Power MOSFET300.007 at VGS = 4.5 V 17 Optimized for "Low Side" SynchronousRectifier Operation 100 % Rg Tested APPLICATIONS DC/DC Converters Synchr

9.7. Size:852K cn vbsemi
si4850dy-t1.pdf

SI4850DY-T1www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.025 at VGS = 10 V 7.660 10.5 nC Optimized for Low Side Synchronous0.030 at VGS = 4.5 V 6.5Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD CCF

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