ECH8697R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ECH8697R
Código: UU
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 24 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12.5 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.5 V
Qgⓘ - Carga de la puerta: 6 nC
trⓘ - Tiempo de subida: 230 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0116 Ohm
Paquete / Cubierta: ECH8
Búsqueda de reemplazo de MOSFET ECH8697R
ECH8697R Datasheet (PDF)
ech8697r.pdf
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ech8693r.pdf
Ordering number : ENA2208AECH8693RN-Channel Power MOSFEThttp://onsemi.com24V, 14A, 7m , Dual ECH8 Common DrainFeatures Low ON-resistance Built-in gate protection resistor 2.5V drive Best suited for LiB charging and discharging switch Common-drain type Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25
ech8695r.pdf
Ordering number : ENA2314A ECH8695R N-Channel Power MOSFET http://onsemi.com 24V, 11A, 9.1m, Dual ECH8 Common DrainFeatures Low On-resistance Built-in gate protection resistor 2.5V drive Best suited for LiB charging and discharging switch Common-drain type Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
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