EFC6612R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: EFC6612R
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 640 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0051 Ohm
Paquete / Cubierta: EFCP
Búsqueda de reemplazo de MOSFET EFC6612R
EFC6612R Datasheet (PDF)
efc6612r-tf efc6612r.pdf
Ordering number : ENA2329A EFC6612R Power MOSFET http://onsemi.com 20V, 5.1m, 23A, Dual N-Channel Features 2.5V drive Common-drain type Protection diode in 2KV ESD HBM Halogen free compliance Applications Lithium-ion battery charging and discharging switch Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Valu
efc6612r.pdf
Ordering number : ENA2329A EFC6612R Power MOSFET http://onsemi.com 20V, 5.1m, 23A, Dual N-Channel Features 2.5V drive Common-drain type Protection diode in 2KV ESD HBM Halogen free compliance Applications Lithium-ion battery charging and discharging switch Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Valu
efc6611r-tf efc6611r.pdf
Ordering number : ENA2291A EFC6611R N-Channel Power MOSFET http://onsemi.com 12V, 27A, 3.2m, Dual EFCP Features 2.5V drive Common-drain type Protection diode in 2KV ESD HBM Halogen free compliance Applications Lithium-ion battery charging and discharging switch Specifications EFCP3517-6DGH-020 Absolute Maximum Ratings at Ta = 25C Paramet
efc6601r.pdf
Ordering number : ENA2151AEFC6601RN-Channel Power MOSFEThttp://onsemi.com24V, 13A, 11.5m , Dual EFCPFeatures 2.5V drive Protection diode in Common-drain type Halogen free compliance 2KV ESD HBMSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitSource-to-Source Voltage VSSS 24 VGate-to-Source Voltage VGSS
efc6605r.pdf
Ordering number : ENA2302 EFC6605R N-Channel Power MOSFEThttp://onsemi.com 20V, 10A, 13.3m, Dual EFCP Features 2.5V drive Common-drain type Protection diode in 2KV ESD HBM Halogen free compliance Applications Lithium-ion battery charging and discharging switch Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions V
efc6604r.pdf
Ordering number : ENA2204A EFC6604R N-Channel Power MOSFEThttp://onsemi.com 12V, 13A, 9.0m, Dual EFCP Features 2.5V drive Protection diode in Common-drain type Halogen free compliance 2KV ESD HBM Applications Lithium-ion battery charging and discharging switch Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions R
efc6602r.pdf
Ordering number : ENA2152AEFC6602RN-Channel Power MOSFEThttp://onsemi.com12V, 18A, 5.9m , Dual EFCPFeatures 2.5V drive Protection diode in Common-drain type Halogen free compliance 2KV ESD HBMSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitSource-to-Source Voltage VSSS 12 VGate-to-Source Voltage VGSS
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918