ELM13424CA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ELM13424CA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 1.4 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua
de drenaje: 3.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 1.5 nS
Cossⓘ - Capacitancia de salida: 35 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
Encapsulados: SOT-23
Búsqueda de reemplazo de ELM13424CA MOSFET
- Selecciónⓘ de transistores por parámetros
ELM13424CA datasheet
..1. Size:586K elm
elm13424ca.pdf 
Single N-channel MOSFET ELM13424CA-S General description Features ELM13424CA-S uses advanced trench technology Vds=30V to provide excellent Rds(on), low gate charge and Id=3.8A (Vgs=10V) operation with gate voltages as low as 2.5V. Rds(on)
7.1. Size:385K elm
elm13421ca.pdf 
Single P-channel MOSFET ELM13421CA-S General description Features ELM13421CA-S uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-2.6A (Vgs=-10V) resistance. Rds(on)
8.1. Size:385K elm
elm13414ca.pdf 
Single N-channel MOSFET ELM13414CA-S General description Features ELM13414CA-S uses advanced trench technology Vds=20V to provide excellent Rds(on), low gate charge and Id=4.2A (Vgs=4.5V) operation with gate voltages as low as 1.8V. Rds(on)
8.2. Size:785K elm
elm13419ca.pdf 
P MOSFET ELM13419CA-S ELM13419CA-S P Vds=-20V MOSFET Id=-3.5A (Vgs=-10V) ESD Rds(on)
8.3. Size:652K elm
elm13416ca.pdf 
Single N-channel MOSFET ELM13416CA-S General description Features ELM13416CA-S uses advanced trench technology to Vds=20V provide excellent Rds(on), low gate charge and operation Id=6.5A (Vgs=4.5V) with gate voltages as low as 1.8V and internal ESD Rds(on)
8.4. Size:385K elm
elm13413ca.pdf 
Single P-channel MOSFET ELM13413CA-S General description Features ELM13413CA-S uses advanced trench technology to Vds=-20V provide excellent Rds(on), low gate charge and low gate Id=-3A (Vgs=-4.5V) resistance. Rds(on)
8.5. Size:492K elm
elm13434ca.pdf 
Single N-channel MOSFET ELM13434CA-S General description Features The ELM13434CA-S uses advanced trench technology to Vds=30V provide excellent RDS(ON) and low gate charge. This Id=4.2A (Vgs=10V) device is suitable for use as a load switch or in PWM Rds(on)
8.6. Size:782K elm
elm13400ca-s.pdf 
Single N-channel MOSFET ELM13400CA-S General description Features ELM13400CA-S uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=5.8A (Vgs=10V) resistance. Rds(on)
8.7. Size:388K elm
elm13418ca.pdf 
Single N-channel MOSFET ELM13418CA-S General description Features ELM13418CA-S uses advanced trench technology Vds=30V to provide excellent Rds(on), low gate charge and Id=3.8A (Vgs=10V) operation with gate voltages as low as 2.5V. Rds(on)
8.8. Size:220K elm
elm13403ca.pdf 
Single P-channel MOSFET ELM13403CA-S General description Features ELM13403CA-S uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-2.6A (Vgs=-10V) resistance. Rds(on)
8.9. Size:781K elm
elm13407ca-s.pdf 
Single P-channel MOSFET ELM13407CA-S General description Features ELM13407CA-S uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-4.1A (Vgs=-10V) resistance. Rds(on)
8.10. Size:385K elm
elm13409ca.pdf 
Single P-channel MOSFET ELM13409CA-S General description Features ELM13409CA-S uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-2.6A (Vgs=-10V) resistance. Rds(on)
8.11. Size:373K elm
elm13401ca.pdf 
Single P-channel MOSFET ELM13401CA-S General description Features ELM13401CA-S uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-4.2A (Vgs=-10V) resistance. Rds(on)
8.12. Size:405K elm
elm13402ca.pdf 
Single N-channel MOSFET ELM13402CA-S General description Features ELM13402CA-S uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=4A (Vgs=10V) resistance. Rds(on)
8.13. Size:406K elm
elm13406ca.pdf 
Single N-channel MOSFET ELM13406CA-S General description Features ELM13406CA-S uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=3.6A (Vgs=10V) resistance. Rds(on)
8.14. Size:718K elm
elm13415ca.pdf 
Single P-channel MOSFET ELM13415CA-S General description Features ELM13415CA-S uses advanced trench technology to Vds=-20V provide excellent Rds(on), low gate charge and low gate Id=-4A (Vgs=-4.5V) resistance. Internal ESD protection is included. Rds(on)
8.15. Size:391K elm
elm13404ca.pdf 
Single N-channel MOSFET ELM13404CA-S General description Features ELM13404CA-S uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=5.8A (Vgs=10V) resistance. Rds(on)
Otros transistores... ELM13409CA, ELM13413CA, ELM13414CA, ELM13415CA, ELM13416CA, ELM13418CA, ELM13419CA, ELM13421CA, AON7403, ELM13434CA, ELM14354AA, ELM14404AA, ELM14405AA, ELM14406AA, ELM14407AA, ELM14408AA, ELM14409AA