ELM13424CA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ELM13424CA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.4 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 3.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 VQgⓘ - Carga de la puerta: 10 nC
trⓘ - Tiempo de subida: 1.5 nS
Cossⓘ - Capacitancia de salida: 35 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de MOSFET ELM13424CA
ELM13424CA Datasheet (PDF)
elm13424ca.pdf
Single N-channel MOSFETELM13424CA-SGeneral description Features ELM13424CA-S uses advanced trench technology Vds=30Vto provide excellent Rds(on), low gate charge and Id=3.8A (Vgs=10V)operation with gate voltages as low as 2.5V. Rds(on)
elm13421ca.pdf
Single P-channel MOSFETELM13421CA-SGeneral description Features ELM13421CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-2.6A (Vgs=-10V)resistance. Rds(on)
elm13414ca.pdf
Single N-channel MOSFETELM13414CA-SGeneral description Features ELM13414CA-S uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=4.2A (Vgs=4.5V)operation with gate voltages as low as 1.8V. Rds(on)
elm13419ca.pdf
P MOSFETELM13419CA-S ELM13419CA-S P Vds=-20V MOSFET Id=-3.5A (Vgs=-10V) ESD Rds(on)
elm13416ca.pdf
Single N-channel MOSFETELM13416CA-SGeneral description Features ELM13416CA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and operation Id=6.5A (Vgs=4.5V)with gate voltages as low as 1.8V and internal ESD Rds(on)
elm13413ca.pdf
Single P-channel MOSFETELM13413CA-SGeneral description Features ELM13413CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-3A (Vgs=-4.5V)resistance. Rds(on)
elm13434ca.pdf
Single N-channel MOSFETELM13434CA-SGeneral description Features The ELM13434CA-S uses advanced trench technology to Vds=30Vprovide excellent RDS(ON) and low gate charge. This Id=4.2A (Vgs=10V)device is suitable for use as a load switch or in PWM Rds(on)
elm13400ca-s.pdf
Single N-channel MOSFETELM13400CA-SGeneral description Features ELM13400CA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=5.8A (Vgs=10V)resistance. Rds(on)
elm13418ca.pdf
Single N-channel MOSFETELM13418CA-SGeneral description Features ELM13418CA-S uses advanced trench technology Vds=30Vto provide excellent Rds(on), low gate charge and Id=3.8A (Vgs=10V)operation with gate voltages as low as 2.5V. Rds(on)
elm13403ca.pdf
Single P-channel MOSFETELM13403CA-SGeneral description Features ELM13403CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-2.6A (Vgs=-10V)resistance. Rds(on)
elm13407ca-s.pdf
Single P-channel MOSFETELM13407CA-SGeneral description Features ELM13407CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-4.1A (Vgs=-10V)resistance. Rds(on)
elm13409ca.pdf
Single P-channel MOSFETELM13409CA-SGeneral description Features ELM13409CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-2.6A (Vgs=-10V)resistance. Rds(on)
elm13401ca.pdf
Single P-channel MOSFETELM13401CA-SGeneral description Features ELM13401CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-4.2A (Vgs=-10V)resistance. Rds(on)
elm13402ca.pdf
Single N-channel MOSFETELM13402CA-SGeneral description Features ELM13402CA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=4A (Vgs=10V)resistance. Rds(on)
elm13406ca.pdf
Single N-channel MOSFETELM13406CA-SGeneral description Features ELM13406CA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=3.6A (Vgs=10V)resistance. Rds(on)
elm13415ca.pdf
Single P-channel MOSFETELM13415CA-SGeneral description Features ELM13415CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-4A (Vgs=-4.5V)resistance. Internal ESD protection is included. Rds(on)
elm13404ca.pdf
Single N-channel MOSFETELM13404CA-SGeneral description Features ELM13404CA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=5.8A (Vgs=10V)resistance. Rds(on)
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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