ELM14604AA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ELM14604AA
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 4.1 nS
   Cossⓘ - Capacitancia de salida: 102 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: SOP-8

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ELM14604AA Datasheet (PDF)

..1. Size:569K elm
elm14604aa.pdf pdf_icon

Complementary MOSFET ELM14604AA-NGeneral Description Features ELM14604AA-N uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=30V Vds=-30Vand low gate charge. Id=6.9A(Vgs=10V) Id=-5A(Vgs=-10V) Rds(on)

7.1. Size:670K elm
elm14606aa.pdf pdf_icon

Complementary MOSFET ELM14606AA-NGeneral Description Features ELM14606AA-N uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=30V Vds=-30V and low gate charge. Id=6.9A(Vgs=10V) Id=-6A(Vgs=-10V) Rds(on)

8.1. Size:624K elm
elm14614aa.pdf pdf_icon

Complementary MOSFET ELM14614AA-NGeneral Description Features ELM14614AA-N uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=40V Vds=-40Vand low gate charge. Id=6A(Vgs=10V) Id=-5A(Vgs=-10V) Rds(on)

9.1. Size:414K elm
elm14702aa-n.pdf pdf_icon

Single N-channel MOSFET with schottky diodeELM14702AA-NGeneral description Features ELM14702AA-N uses advanced trench Vds=30V Schottky diodetechnology to provide excellent Rds(on) Id=11A Vds(V)=30Vand low gate charge. Rds(on)

9.2. Size:414K elm
elm14409aa.pdf pdf_icon

Single P-channel MOSFETELM14409AA-NGeneral description Features ELM14409AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-15A (Vgs=-10V)resistance. Rds(on)

9.3. Size:458K elm
elm14430aa.pdf pdf_icon

Single N-channel MOSFETELM14430AA-NGeneral description Features ELM14430AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=18A (Vgs=10V)resistance. Rds(on)

9.4. Size:394K elm
elm14427aa.pdf pdf_icon

Single P-channel MOSFETELM14427AA-NGeneral description Features ELM14427AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12.5A (Vgs=-20V)resistance. Internal ESD protection is included. Rds(on)

9.5. Size:410K elm
elm14411aa.pdf pdf_icon

Single P-channel MOSFETELM14411AA-NGeneral description Features ELM14411AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8A (Vgs=-10V)resistance. Rds(on)

9.6. Size:389K elm
elm14822aa.pdf pdf_icon

Dual N-channel MOSFETELM14822AA-NGeneral description Features ELM14822AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on) and low gate charge. Id=8.5A (Vgs=10V) Rds(on)

9.7. Size:394K elm
elm14419aa.pdf pdf_icon

Single P-channel MOSFETELM14419AA-NGeneral description Features ELM14419AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-9.7A (Vgs=-10V)resistance. Rds(on)

9.8. Size:401K elm
elm14468aa.pdf pdf_icon

Single N-channel MOSFETELM14468AA-NGeneral description Features ELM14468AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=11.6A (Vgs=10V)resistance. Rds(on)

9.9. Size:389K elm
elm14425aa.pdf pdf_icon

Single P-channel MOSFETELM14425AA-NGeneral description Features ELM14425AA-N uses advanced trench technology to Vds=-38Vprovide excellent Rds(on), low gate charge and low gate Id=-14A (Vgs=-20V)resistance. Internal ESD protection is included. Rds(on)

9.10. Size:428K elm
elm14408aa.pdf pdf_icon

Single N-channel MOSFETELM14408AA-NGeneral description Features ELM14408AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=12A (Vgs=10V)resistance. Rds(on)

9.11. Size:399K elm
elm14466aa.pdf pdf_icon

Single N-channel MOSFETELM14466AA-NGeneral description Features ELM14466AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=9.4A (Vgs=10V)resistance. Rds(on)

9.12. Size:395K elm
elm14806aa.pdf pdf_icon

Dual N-channel MOSFETELM14806AA-NGeneral description Features ELM14806AA-N uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=9.4A (Vgs=10V)operation with gate voltages as low as 1.8V and internal Rds(on)

9.13. Size:401K elm
elm14828aa.pdf pdf_icon

Dual N-channel MOSFETELM14828AA-NGeneral description Features ELM14828AA-N uses advanced trench technology to Vds=60Vprovide excellent Rds(on) and low gate charge. Id=4.5A (Vgs=10V) Rds(on)

9.14. Size:389K elm
elm14801aa.pdf pdf_icon

Dual P-channel MOSFETELM14801AA-NGeneral description Features ELM14801AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on) and low gate charge. Id=-5A (Vgs=-10V) Rds(on)

9.15. Size:390K elm
elm14420aa.pdf pdf_icon

Single N-channel MOSFETELM14420AA-NGeneral description Features ELM14420AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=13.7A (Vgs=10V)resistance. Rds(on)

9.16. Size:410K elm
elm14805aa.pdf pdf_icon

Dual P-channel MOSFETELM14805AA-NGeneral description Features ELM14805AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on) and low gate charge. Id=-8A (Vgs=-20V) Rds(on)

9.17. Size:409K elm
elm14407aa.pdf pdf_icon

Single P-channel MOSFETELM14407AA-NGeneral description Features ELM14407AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12A (Vgs=-20V)resistance. Rds(on)

9.18. Size:415K elm
elm14406aa.pdf pdf_icon

Single N-channel MOSFETELM14406AA-NGeneral description Features ELM14406AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=11.5A (Vgs=10V)resistance. Rds(on)

9.19. Size:382K elm
elm14440aa.pdf pdf_icon

Single N-channel MOSFETELM14440AA-NGeneral description Features ELM14440AA-N uses advanced trench technology to Vds=60Vprovide excellent Rds(on), low gate charge and low gate Id=5A (Vgs=10V)resistance. Rds(on)

9.20. Size:388K elm
elm14826aa.pdf pdf_icon

Dual N-channel MOSFETELM14826AA-NGeneral description Features ELM14826AA-N uses advanced trench technology to Vds=60Vprovide excellent Rds(on) and low gate charge. Id=6.3A (Vgs=10V) Rds(on)

9.21. Size:1111K elm
elm14803ab.pdf pdf_icon

Dual P-channel MOSFETELM14803AB-NGeneral description Features ELM14803AB-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on) and low gate charge. Id=-5A (Vgs=-10V) Rds(on)

9.22. Size:434K elm
elm14418aa.pdf pdf_icon

Single N-channel MOSFETELM14418AA-NGeneral description Features ELM14418AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=11.5A (Vgs=20V)resistance. Rds(on)

9.23. Size:394K elm
elm14405aa.pdf pdf_icon

Single P-channel MOSFETELM14405AA-NGeneral description Features ELM14405AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-6A (Vgs=-10V)resistance. Rds(on)

9.24. Size:402K elm
elm14404aa.pdf pdf_icon

Single N-channel MOSFETELM14404AA-NGeneral description Features ELM14404AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=8.5A (Vgs=10V)resistance. Rds(on)

9.25. Size:390K elm
elm14423aa.pdf pdf_icon

Single P-channel MOSFETELM14423AA-NGeneral description Features ELM14423AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-15A (Vgs=-20V)resistance. Internal ESD protection is included. Rds(on)

9.26. Size:927K elm
elm14354aa.pdf pdf_icon

Single N-channel MOSFETELM14354AA-NGeneral description Features ELM14354AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=23A (Vgs=10V)resistance. Rds(on)

9.27. Size:392K elm
elm14812aa.pdf pdf_icon

Dual N-channel MOSFETELM14812AA-NGeneral description Features ELM14812AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on) and low gate charge. Id=6.9A (Vgs=10V) Rds(on)

9.28. Size:392K elm
elm14800aa.pdf pdf_icon

Dual N-channel MOSFETELM14800AA-NGeneral description Features ELM14800AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on) and low gate charge. Id=6.9A (Vgs=10V) Rds(on)

9.29. Size:890K cn vbsemi
elm14800aa.pdf pdf_icon

ELM14800AAwww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

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