ELM14702AA-N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ELM14702AA-N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 3.9 nS
Cossⓘ - Capacitancia de salida: 212 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
Encapsulados: SOP-8
Búsqueda de reemplazo de ELM14702AA-N MOSFET
- Selecciónⓘ de transistores por parámetros
ELM14702AA-N datasheet
..1. Size:414K elm
elm14702aa-n.pdf 
Single N-channel MOSFET with schottky diode ELM14702AA-N General description Features ELM14702AA-N uses advanced trench Vds=30V Schottky diode technology to provide excellent Rds(on) Id=11A Vds(V)=30V and low gate charge. Rds(on)
9.1. Size:414K elm
elm14409aa.pdf
Single P-channel MOSFET ELM14409AA-N General description Features ELM14409AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-15A (Vgs=-10V) resistance. Rds(on)
9.2. Size:458K elm
elm14430aa.pdf
Single N-channel MOSFET ELM14430AA-N General description Features ELM14430AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=18A (Vgs=10V) resistance. Rds(on)
9.3. Size:394K elm
elm14427aa.pdf
Single P-channel MOSFET ELM14427AA-N General description Features ELM14427AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-12.5A (Vgs=-20V) resistance. Internal ESD protection is included. Rds(on)
9.4. Size:410K elm
elm14411aa.pdf
Single P-channel MOSFET ELM14411AA-N General description Features ELM14411AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-8A (Vgs=-10V) resistance. Rds(on)
9.5. Size:389K elm
elm14822aa.pdf
Dual N-channel MOSFET ELM14822AA-N General description Features ELM14822AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on) and low gate charge. Id=8.5A (Vgs=10V) Rds(on)
9.6. Size:394K elm
elm14419aa.pdf
Single P-channel MOSFET ELM14419AA-N General description Features ELM14419AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-9.7A (Vgs=-10V) resistance. Rds(on)
9.7. Size:401K elm
elm14468aa.pdf
Single N-channel MOSFET ELM14468AA-N General description Features ELM14468AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=11.6A (Vgs=10V) resistance. Rds(on)
9.8. Size:389K elm
elm14425aa.pdf
Single P-channel MOSFET ELM14425AA-N General description Features ELM14425AA-N uses advanced trench technology to Vds=-38V provide excellent Rds(on), low gate charge and low gate Id=-14A (Vgs=-20V) resistance. Internal ESD protection is included. Rds(on)
9.9. Size:428K elm
elm14408aa.pdf
Single N-channel MOSFET ELM14408AA-N General description Features ELM14408AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=12A (Vgs=10V) resistance. Rds(on)
9.10. Size:399K elm
elm14466aa.pdf
Single N-channel MOSFET ELM14466AA-N General description Features ELM14466AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=9.4A (Vgs=10V) resistance. Rds(on)
9.11. Size:395K elm
elm14806aa.pdf
Dual N-channel MOSFET ELM14806AA-N General description Features ELM14806AA-N uses advanced trench technology Vds=20V to provide excellent Rds(on), low gate charge and Id=9.4A (Vgs=10V) operation with gate voltages as low as 1.8V and internal Rds(on)
9.12. Size:401K elm
elm14828aa.pdf
Dual N-channel MOSFET ELM14828AA-N General description Features ELM14828AA-N uses advanced trench technology to Vds=60V provide excellent Rds(on) and low gate charge. Id=4.5A (Vgs=10V) Rds(on)
9.13. Size:569K elm
elm14604aa.pdf
Complementary MOSFET ELM14604AA-N General Description Features ELM14604AA-N uses advanced trench N-channel P-channel technology to provide excellent Rds(on) Vds=30V Vds=-30V and low gate charge. Id=6.9A(Vgs=10V) Id=-5A(Vgs=-10V) Rds(on)
9.14. Size:624K elm
elm14614aa.pdf
Complementary MOSFET ELM14614AA-N General Description Features ELM14614AA-N uses advanced trench N-channel P-channel technology to provide excellent Rds(on) Vds=40V Vds=-40V and low gate charge. Id=6A(Vgs=10V) Id=-5A(Vgs=-10V) Rds(on)
9.15. Size:389K elm
elm14801aa.pdf
Dual P-channel MOSFET ELM14801AA-N General description Features ELM14801AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on) and low gate charge. Id=-5A (Vgs=-10V) Rds(on)
9.16. Size:390K elm
elm14420aa.pdf
Single N-channel MOSFET ELM14420AA-N General description Features ELM14420AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=13.7A (Vgs=10V) resistance. Rds(on)
9.17. Size:670K elm
elm14606aa.pdf
Complementary MOSFET ELM14606AA-N General Description Features ELM14606AA-N uses advanced trench N-channel P-channel technology to provide excellent Rds(on) Vds=30V Vds=-30V and low gate charge. Id=6.9A(Vgs=10V) Id=-6A(Vgs=-10V) Rds(on)
9.18. Size:410K elm
elm14805aa.pdf
Dual P-channel MOSFET ELM14805AA-N General description Features ELM14805AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on) and low gate charge. Id=-8A (Vgs=-20V) Rds(on)
9.19. Size:409K elm
elm14407aa.pdf
Single P-channel MOSFET ELM14407AA-N General description Features ELM14407AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-12A (Vgs=-20V) resistance. Rds(on)
9.20. Size:415K elm
elm14406aa.pdf
Single N-channel MOSFET ELM14406AA-N General description Features ELM14406AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=11.5A (Vgs=10V) resistance. Rds(on)
9.21. Size:382K elm
elm14440aa.pdf
Single N-channel MOSFET ELM14440AA-N General description Features ELM14440AA-N uses advanced trench technology to Vds=60V provide excellent Rds(on), low gate charge and low gate Id=5A (Vgs=10V) resistance. Rds(on)
9.22. Size:388K elm
elm14826aa.pdf
Dual N-channel MOSFET ELM14826AA-N General description Features ELM14826AA-N uses advanced trench technology to Vds=60V provide excellent Rds(on) and low gate charge. Id=6.3A (Vgs=10V) Rds(on)
9.23. Size:1111K elm
elm14803ab.pdf
Dual P-channel MOSFET ELM14803AB-N General description Features ELM14803AB-N uses advanced trench technology to Vds=-30V provide excellent Rds(on) and low gate charge. Id=-5A (Vgs=-10V) Rds(on)
9.24. Size:434K elm
elm14418aa.pdf
Single N-channel MOSFET ELM14418AA-N General description Features ELM14418AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=11.5A (Vgs=20V) resistance. Rds(on)
9.25. Size:394K elm
elm14405aa.pdf
Single P-channel MOSFET ELM14405AA-N General description Features ELM14405AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-6A (Vgs=-10V) resistance. Rds(on)
9.26. Size:402K elm
elm14404aa.pdf
Single N-channel MOSFET ELM14404AA-N General description Features ELM14404AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=8.5A (Vgs=10V) resistance. Rds(on)
9.27. Size:390K elm
elm14423aa.pdf
Single P-channel MOSFET ELM14423AA-N General description Features ELM14423AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-15A (Vgs=-20V) resistance. Internal ESD protection is included. Rds(on)
9.28. Size:927K elm
elm14354aa.pdf
Single N-channel MOSFET ELM14354AA-N General description Features ELM14354AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=23A (Vgs=10V) resistance. Rds(on)
9.29. Size:392K elm
elm14812aa.pdf
Dual N-channel MOSFET ELM14812AA-N General description Features ELM14812AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on) and low gate charge. Id=6.9A (Vgs=10V) Rds(on)
9.30. Size:392K elm
elm14800aa.pdf
Dual N-channel MOSFET ELM14800AA-N General description Features ELM14800AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on) and low gate charge. Id=6.9A (Vgs=10V) Rds(on)
Otros transistores... ELM14427AA, ELM14430AA, ELM14440AA, ELM14466AA, ELM14468AA, ELM14604AA, ELM14606AA, ELM14614AA, IRLZ44N, ELM14800AA, ELM14801AA, ELM14803AB, ELM14805AA, ELM14806AA, ELM14812AA, ELM14822AA, ELM14826AA
