ELM14826AA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ELM14826AA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 2 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 6.3 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
   Carga de la puerta (Qg): 47.6 nC
   Tiempo de subida (tr): 5 nS
   Conductancia de drenaje-sustrato (Cd): 155 pF
   Resistencia entre drenaje y fuente RDS(on): 0.025 Ohm
   Paquete / Cubierta: SOP-8

Búsqueda de reemplazo de MOSFET ELM14826AA

ELM14826AA Datasheet (PDF)

..1. Size:388K elm
elm14826aa.pdf

Dual N-channel MOSFETELM14826AA-NGeneral description Features ELM14826AA-N uses advanced trench technology to Vds=60Vprovide excellent Rds(on) and low gate charge. Id=6.3A (Vgs=10V) Rds(on)

7.1. Size:389K elm
elm14822aa.pdf

Dual N-channel MOSFETELM14822AA-NGeneral description Features ELM14822AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on) and low gate charge. Id=8.5A (Vgs=10V) Rds(on)

7.2. Size:401K elm
elm14828aa.pdf

Dual N-channel MOSFETELM14828AA-NGeneral description Features ELM14828AA-N uses advanced trench technology to Vds=60Vprovide excellent Rds(on) and low gate charge. Id=4.5A (Vgs=10V) Rds(on)

8.1. Size:395K elm
elm14806aa.pdf

Dual N-channel MOSFETELM14806AA-NGeneral description Features ELM14806AA-N uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=9.4A (Vgs=10V)operation with gate voltages as low as 1.8V and internal Rds(on)

8.2. Size:389K elm
elm14801aa.pdf

Dual P-channel MOSFETELM14801AA-NGeneral description Features ELM14801AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on) and low gate charge. Id=-5A (Vgs=-10V) Rds(on)

8.3. Size:410K elm
elm14805aa.pdf

Dual P-channel MOSFETELM14805AA-NGeneral description Features ELM14805AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on) and low gate charge. Id=-8A (Vgs=-20V) Rds(on)

8.4. Size:1111K elm
elm14803ab.pdf

Dual P-channel MOSFETELM14803AB-NGeneral description Features ELM14803AB-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on) and low gate charge. Id=-5A (Vgs=-10V) Rds(on)

8.5. Size:392K elm
elm14812aa.pdf

Dual N-channel MOSFETELM14812AA-NGeneral description Features ELM14812AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on) and low gate charge. Id=6.9A (Vgs=10V) Rds(on)

8.6. Size:392K elm
elm14800aa.pdf

Dual N-channel MOSFETELM14800AA-NGeneral description Features ELM14800AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on) and low gate charge. Id=6.9A (Vgs=10V) Rds(on)

8.7. Size:890K cn vbsemi
elm14800aa.pdf

ELM14800AAwww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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