ELM321604A
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ELM321604A
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 40
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 43
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 43
nS
Cossⓘ - Capacitancia
de salida: 480
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016
Ohm
Paquete / Cubierta:
TO-252
Búsqueda de reemplazo de ELM321604A
MOSFET
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Selección ⓘ de transistores por parámetros
ELM321604A
Datasheet (PDF)
..1. Size:891K elm
elm321604a.pdf 
Single P-channel MOSFETELM321604A-SGeneral description Features ELM321604A-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-43A resistance. Rds(on)
8.1. Size:886K elm
elm321504a.pdf 
Single P-channel MOSFETELM321504A-SGeneral description Features ELM321504A-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-45A resistance. Rds(on)
9.1. Size:595K elm
elm32424la.pdf 
Single N-channel MOSFETELM32424LA-SGeneral description Features ELM32424LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=50A resistance. Rds(on)
9.2. Size:604K elm
elm32403la.pdf 
Single P-channel MOSFETELM32403LA-SGeneral description Features ELM32403LA-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)
9.3. Size:430K elm
elm32428la.pdf 
Single N-channel MOSFETELM32428LA-SGeneral description Features ELM32428LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=75A resistance. Rds(on)
9.4. Size:452K elm
elm32414la.pdf 
Single N-channel MOSFETELM32414LA-SGeneral description Features ELM32414LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=35A resistance. Rds(on)
9.5. Size:648K elm
elm32404la.pdf 
Single N-channel MOSFETELM32404LA-SGeneral description Features ELM32404LA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=12A resistance. Rds(on)
9.6. Size:801K elm
elm32409la-s.pdf 
Single P-channel MOSFETELM32409LA-SGeneral description Features ELM32409LA-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-10A resistance. Rds(on)
9.7. Size:600K elm
elm32434la.pdf 
Single N-channel MOSFETELM32434LA-SGeneral description Features ELM32434LA-S uses advanced trench technology to Vds=600Vprovide excellent Rds(on), low gate charge and low gate Id=2A resistance. Rds(on)
9.8. Size:609K elm
elm32408la.pdf 
Single N-channel MOSFETELM32408LA-SGeneral description Features ELM32408LA-S uses advanced trench technology to Vds=40Vprovide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)
9.9. Size:592K elm
elm32422la.pdf 
Single N-channel MOSFETELM32422LA-SGeneral description Features ELM32422LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=60A resistance. Rds(on)
9.10. Size:787K elm
elm32d548a.pdf 
Single N-channel MOSFETELM32D548A-SGeneral description Features ELM32D548A-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=85A resistance. Rds(on)
9.11. Size:716K elm
elm322806a.pdf 
Single N-channel MOSFETELM322806A-SGeneral description Features ELM322806A-S uses advanced trench technology to Vds=60Vprovide excellent Rds(on), low gate charge and low gate Id=30A resistance. Rds(on)
9.12. Size:547K elm
elm32430la.pdf 
Single N-channel MOSFETELM32430LA-SGeneral description Features ELM32430LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=45A resistance. Rds(on)
9.13. Size:658K elm
elm32418la.pdf 
Single N-channel MOSFETELM32418LA-SGeneral description Features ELM32418LA-S uses advanced trench technology to Vds=40Vprovide excellent Rds(on), low gate charge and low gate Id=20A resistance. Rds(on)
9.14. Size:982K elm
elm32401la-s.pdf 
Single P-channel MOSFETELM32401LA-SGeneral description Features ELM32401LA-S uses advanced trench technology to Vds=-60Vprovide excellent Rds(on), low gate charge and low gate Id=-7A resistance. Rds(on)
9.15. Size:625K elm
elm32402la.pdf 
Single N-channel MOSFETELM32402LA-SGeneral description Features ELM32402LA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=20A resistance. Rds(on)
9.16. Size:625K elm
elm32420la.pdf 
Single N-channel MOSFETELM32420LA-SGeneral description Features ELM32420LA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=45A resistance. Rds(on)
9.17. Size:390K elm
elm323506a.pdf 
Single P-channel MOSFETELM323506A-SGeneral description Features ELM323506A-S uses advanced trench technology to Vds=-60Vprovide excellent Rds(on), low gate charge and low gate Id=-26A resistance. Rds(on)
9.18. Size:578K elm
elm32405la.pdf 
Single P-channel MOSFETELM32405LA-SGeneral description Features ELM32405LA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12A resistance. Rds(on)
9.19. Size:591K elm
elm32416la.pdf 
Single N-channel MOSFETELM32416LA-SGeneral description Features ELM32416LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=46A resistance. Rds(on)
9.20. Size:601K elm
elm32407la.pdf 
Single P-channel MOSFETELM32407LA-SGeneral description Features ELM32407LA-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-18A resistance. Rds(on)
9.21. Size:602K elm
elm32400la.pdf 
Single N-channel MOSFETELM32400LA-SGeneral description Features ELM32400LA-S uses advanced trench technology to Vds=60Vprovide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)
9.22. Size:473K elm
elm32412la.pdf 
Single N-channel MOSFETELM32412LA-SGeneral description Features ELM32412LA-S uses advanced trench technology to Vds=40Vprovide excellent Rds(on), low gate charge and low gate Id=12A resistance. Rds(on)
Otros transistores... ELM18801BA
, ELM18806BA
, ELM18810BA
, ELM18814BA
, ELM18822BA
, ELM24603HA
, ELM24604HA
, ELM321504A
, 4435
, ELM322806A
, ELM323506A
, ELM32400LA
, ELM32401LA-S
, ELM32402LA
, ELM32403LA
, ELM32404LA
, ELM32405LA
.
History: SI7682DP
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