ELM32403LA Todos los transistores

 

ELM32403LA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ELM32403LA
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9.7 nS
   Cossⓘ - Capacitancia de salida: 310 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
   Paquete / Cubierta: TO-252

 Búsqueda de reemplazo de MOSFET ELM32403LA

 

ELM32403LA Datasheet (PDF)

 ..1. Size:604K  elm
elm32403la.pdf

ELM32403LA
ELM32403LA

Single P-channel MOSFETELM32403LA-SGeneral description Features ELM32403LA-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)

 7.1. Size:648K  elm
elm32404la.pdf

ELM32403LA
ELM32403LA

Single N-channel MOSFETELM32404LA-SGeneral description Features ELM32404LA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=12A resistance. Rds(on)

 7.2. Size:801K  elm
elm32409la-s.pdf

ELM32403LA
ELM32403LA

Single P-channel MOSFETELM32409LA-SGeneral description Features ELM32409LA-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-10A resistance. Rds(on)

 7.3. Size:609K  elm
elm32408la.pdf

ELM32403LA
ELM32403LA

Single N-channel MOSFETELM32408LA-SGeneral description Features ELM32408LA-S uses advanced trench technology to Vds=40Vprovide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)

 7.4. Size:982K  elm
elm32401la-s.pdf

ELM32403LA
ELM32403LA

Single P-channel MOSFETELM32401LA-SGeneral description Features ELM32401LA-S uses advanced trench technology to Vds=-60Vprovide excellent Rds(on), low gate charge and low gate Id=-7A resistance. Rds(on)

 7.5. Size:625K  elm
elm32402la.pdf

ELM32403LA
ELM32403LA

Single N-channel MOSFETELM32402LA-SGeneral description Features ELM32402LA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=20A resistance. Rds(on)

 7.6. Size:578K  elm
elm32405la.pdf

ELM32403LA
ELM32403LA

Single P-channel MOSFETELM32405LA-SGeneral description Features ELM32405LA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12A resistance. Rds(on)

 7.7. Size:601K  elm
elm32407la.pdf

ELM32403LA
ELM32403LA

Single P-channel MOSFETELM32407LA-SGeneral description Features ELM32407LA-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-18A resistance. Rds(on)

 7.8. Size:602K  elm
elm32400la.pdf

ELM32403LA
ELM32403LA

Single N-channel MOSFETELM32400LA-SGeneral description Features ELM32400LA-S uses advanced trench technology to Vds=60Vprovide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


ELM32403LA
  ELM32403LA
  ELM32403LA
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top