ELM32409LA-S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ELM32409LA-S
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 9.2 nS
   Cossⓘ - Capacitancia de salida: 300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.044 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET ELM32409LA-S

ELM32409LA-S Datasheet (PDF)

..1. Size:801K elm
elm32409la-s.pdf

Single P-channel MOSFETELM32409LA-SGeneral description Features ELM32409LA-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-10A resistance. Rds(on)

7.1. Size:604K elm
elm32403la.pdf

Single P-channel MOSFETELM32403LA-SGeneral description Features ELM32403LA-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)

7.2. Size:648K elm
elm32404la.pdf

Single N-channel MOSFETELM32404LA-SGeneral description Features ELM32404LA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=12A resistance. Rds(on)

7.3. Size:609K elm
elm32408la.pdf

Single N-channel MOSFETELM32408LA-SGeneral description Features ELM32408LA-S uses advanced trench technology to Vds=40Vprovide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)

7.4. Size:982K elm
elm32401la-s.pdf

Single P-channel MOSFETELM32401LA-SGeneral description Features ELM32401LA-S uses advanced trench technology to Vds=-60Vprovide excellent Rds(on), low gate charge and low gate Id=-7A resistance. Rds(on)

7.5. Size:625K elm
elm32402la.pdf

Single N-channel MOSFETELM32402LA-SGeneral description Features ELM32402LA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=20A resistance. Rds(on)

7.6. Size:578K elm
elm32405la.pdf

Single P-channel MOSFETELM32405LA-SGeneral description Features ELM32405LA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12A resistance. Rds(on)

7.7. Size:601K elm
elm32407la.pdf

Single P-channel MOSFETELM32407LA-SGeneral description Features ELM32407LA-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-18A resistance. Rds(on)

7.8. Size:602K elm
elm32400la.pdf

Single N-channel MOSFETELM32400LA-SGeneral description Features ELM32400LA-S uses advanced trench technology to Vds=60Vprovide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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