ELM32D548A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ELM32D548A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 59 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 85 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.35 V
   Qgⓘ - Carga de la puerta: 54 nC
   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 346 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0046 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET ELM32D548A

ELM32D548A Datasheet (PDF)

..1. Size:787K elm
elm32d548a.pdf

Single N-channel MOSFETELM32D548A-SGeneral description Features ELM32D548A-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=85A resistance. Rds(on)

9.1. Size:595K elm
elm32424la.pdf

Single N-channel MOSFETELM32424LA-SGeneral description Features ELM32424LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=50A resistance. Rds(on)

9.2. Size:604K elm
elm32403la.pdf

Single P-channel MOSFETELM32403LA-SGeneral description Features ELM32403LA-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)

9.3. Size:430K elm
elm32428la.pdf

Single N-channel MOSFETELM32428LA-SGeneral description Features ELM32428LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=75A resistance. Rds(on)

9.4. Size:452K elm
elm32414la.pdf

Single N-channel MOSFETELM32414LA-SGeneral description Features ELM32414LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=35A resistance. Rds(on)

9.5. Size:648K elm
elm32404la.pdf

Single N-channel MOSFETELM32404LA-SGeneral description Features ELM32404LA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=12A resistance. Rds(on)

9.6. Size:801K elm
elm32409la-s.pdf

Single P-channel MOSFETELM32409LA-SGeneral description Features ELM32409LA-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-10A resistance. Rds(on)

9.7. Size:886K elm
elm321504a.pdf

Single P-channel MOSFETELM321504A-SGeneral description Features ELM321504A-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-45A resistance. Rds(on)

9.8. Size:600K elm
elm32434la.pdf

Single N-channel MOSFETELM32434LA-SGeneral description Features ELM32434LA-S uses advanced trench technology to Vds=600Vprovide excellent Rds(on), low gate charge and low gate Id=2A resistance. Rds(on)

9.9. Size:609K elm
elm32408la.pdf

Single N-channel MOSFETELM32408LA-SGeneral description Features ELM32408LA-S uses advanced trench technology to Vds=40Vprovide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)

9.10. Size:592K elm
elm32422la.pdf

Single N-channel MOSFETELM32422LA-SGeneral description Features ELM32422LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=60A resistance. Rds(on)

9.11. Size:716K elm
elm322806a.pdf

Single N-channel MOSFETELM322806A-SGeneral description Features ELM322806A-S uses advanced trench technology to Vds=60Vprovide excellent Rds(on), low gate charge and low gate Id=30A resistance. Rds(on)

9.12. Size:547K elm
elm32430la.pdf

Single N-channel MOSFETELM32430LA-SGeneral description Features ELM32430LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=45A resistance. Rds(on)

9.13. Size:658K elm
elm32418la.pdf

Single N-channel MOSFETELM32418LA-SGeneral description Features ELM32418LA-S uses advanced trench technology to Vds=40Vprovide excellent Rds(on), low gate charge and low gate Id=20A resistance. Rds(on)

9.14. Size:982K elm
elm32401la-s.pdf

Single P-channel MOSFETELM32401LA-SGeneral description Features ELM32401LA-S uses advanced trench technology to Vds=-60Vprovide excellent Rds(on), low gate charge and low gate Id=-7A resistance. Rds(on)

9.15. Size:625K elm
elm32402la.pdf

Single N-channel MOSFETELM32402LA-SGeneral description Features ELM32402LA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=20A resistance. Rds(on)

9.16. Size:625K elm
elm32420la.pdf

Single N-channel MOSFETELM32420LA-SGeneral description Features ELM32420LA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=45A resistance. Rds(on)

9.17. Size:891K elm
elm321604a.pdf

Single P-channel MOSFETELM321604A-SGeneral description Features ELM321604A-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-43A resistance. Rds(on)

9.18. Size:390K elm
elm323506a.pdf

Single P-channel MOSFETELM323506A-SGeneral description Features ELM323506A-S uses advanced trench technology to Vds=-60Vprovide excellent Rds(on), low gate charge and low gate Id=-26A resistance. Rds(on)

9.19. Size:578K elm
elm32405la.pdf

Single P-channel MOSFETELM32405LA-SGeneral description Features ELM32405LA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12A resistance. Rds(on)

9.20. Size:591K elm
elm32416la.pdf

Single N-channel MOSFETELM32416LA-SGeneral description Features ELM32416LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=46A resistance. Rds(on)

9.21. Size:601K elm
elm32407la.pdf

Single P-channel MOSFETELM32407LA-SGeneral description Features ELM32407LA-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-18A resistance. Rds(on)

9.22. Size:602K elm
elm32400la.pdf

Single N-channel MOSFETELM32400LA-SGeneral description Features ELM32400LA-S uses advanced trench technology to Vds=60Vprovide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)

9.23. Size:473K elm
elm32412la.pdf

Single N-channel MOSFETELM32412LA-SGeneral description Features ELM32412LA-S uses advanced trench technology to Vds=40Vprovide excellent Rds(on), low gate charge and low gate Id=12A resistance. Rds(on)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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