ELM32D548A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ELM32D548A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 59
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 30
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 85
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16
nS
Cossⓘ - Capacitancia
de salida: 346
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0046
Ohm
Paquete / Cubierta:
TO-252
Búsqueda de reemplazo de ELM32D548A MOSFET
-
Selección ⓘ de transistores por parámetros
ELM32D548A datasheet
..1. Size:787K elm
elm32d548a.pdf 
Single N-channel MOSFET ELM32D548A-S General description Features ELM32D548A-S uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=85A resistance. Rds(on)
9.1. Size:595K elm
elm32424la.pdf 
Single N-channel MOSFET ELM32424LA-S General description Features ELM32424LA-S uses advanced trench technology to Vds=25V provide excellent Rds(on), low gate charge and low gate Id=50A resistance. Rds(on)
9.2. Size:604K elm
elm32403la.pdf 
Single P-channel MOSFET ELM32403LA-S General description Features ELM32403LA-S uses advanced trench technology to Vds=-40V provide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)
9.3. Size:430K elm
elm32428la.pdf 
Single N-channel MOSFET ELM32428LA-S General description Features ELM32428LA-S uses advanced trench technology to Vds=25V provide excellent Rds(on), low gate charge and low gate Id=75A resistance. Rds(on)
9.4. Size:452K elm
elm32414la.pdf 
Single N-channel MOSFET ELM32414LA-S General description Features ELM32414LA-S uses advanced trench technology to Vds=25V provide excellent Rds(on), low gate charge and low gate Id=35A resistance. Rds(on)
9.5. Size:648K elm
elm32404la.pdf 
Single N-channel MOSFET ELM32404LA-S General description Features ELM32404LA-S uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=12A resistance. Rds(on)
9.6. Size:801K elm
elm32409la-s.pdf 
Single P-channel MOSFET ELM32409LA-S General description Features ELM32409LA-S uses advanced trench technology to Vds=-40V provide excellent Rds(on), low gate charge and low gate Id=-10A resistance. Rds(on)
9.7. Size:886K elm
elm321504a.pdf 
Single P-channel MOSFET ELM321504A-S General description Features ELM321504A-S uses advanced trench technology to Vds=-40V provide excellent Rds(on), low gate charge and low gate Id=-45A resistance. Rds(on)
9.8. Size:600K elm
elm32434la.pdf 
Single N-channel MOSFET ELM32434LA-S General description Features ELM32434LA-S uses advanced trench technology to Vds=600V provide excellent Rds(on), low gate charge and low gate Id=2A resistance. Rds(on)
9.9. Size:609K elm
elm32408la.pdf 
Single N-channel MOSFET ELM32408LA-S General description Features ELM32408LA-S uses advanced trench technology to Vds=40V provide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)
9.10. Size:592K elm
elm32422la.pdf 
Single N-channel MOSFET ELM32422LA-S General description Features ELM32422LA-S uses advanced trench technology to Vds=25V provide excellent Rds(on), low gate charge and low gate Id=60A resistance. Rds(on)
9.11. Size:716K elm
elm322806a.pdf 
Single N-channel MOSFET ELM322806A-S General description Features ELM322806A-S uses advanced trench technology to Vds=60V provide excellent Rds(on), low gate charge and low gate Id=30A resistance. Rds(on)
9.12. Size:547K elm
elm32430la.pdf 
Single N-channel MOSFET ELM32430LA-S General description Features ELM32430LA-S uses advanced trench technology to Vds=25V provide excellent Rds(on), low gate charge and low gate Id=45A resistance. Rds(on)
9.13. Size:658K elm
elm32418la.pdf 
Single N-channel MOSFET ELM32418LA-S General description Features ELM32418LA-S uses advanced trench technology to Vds=40V provide excellent Rds(on), low gate charge and low gate Id=20A resistance. Rds(on)
9.14. Size:982K elm
elm32401la-s.pdf 
Single P-channel MOSFET ELM32401LA-S General description Features ELM32401LA-S uses advanced trench technology to Vds=-60V provide excellent Rds(on), low gate charge and low gate Id=-7A resistance. Rds(on)
9.15. Size:625K elm
elm32402la.pdf 
Single N-channel MOSFET ELM32402LA-S General description Features ELM32402LA-S uses advanced trench technology to Vds=20V provide excellent Rds(on), low gate charge and low gate Id=20A resistance. Rds(on)
9.16. Size:625K elm
elm32420la.pdf 
Single N-channel MOSFET ELM32420LA-S General description Features ELM32420LA-S uses advanced trench technology to Vds=20V provide excellent Rds(on), low gate charge and low gate Id=45A resistance. Rds(on)
9.17. Size:891K elm
elm321604a.pdf 
Single P-channel MOSFET ELM321604A-S General description Features ELM321604A-S uses advanced trench technology to Vds=-40V provide excellent Rds(on), low gate charge and low gate Id=-43A resistance. Rds(on)
9.18. Size:390K elm
elm323506a.pdf 
Single P-channel MOSFET ELM323506A-S General description Features ELM323506A-S uses advanced trench technology to Vds=-60V provide excellent Rds(on), low gate charge and low gate Id=-26A resistance. Rds(on)
9.19. Size:578K elm
elm32405la.pdf 
Single P-channel MOSFET ELM32405LA-S General description Features ELM32405LA-S uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-12A resistance. Rds(on)
9.20. Size:591K elm
elm32416la.pdf 
Single N-channel MOSFET ELM32416LA-S General description Features ELM32416LA-S uses advanced trench technology to Vds=25V provide excellent Rds(on), low gate charge and low gate Id=46A resistance. Rds(on)
9.21. Size:601K elm
elm32407la.pdf 
Single P-channel MOSFET ELM32407LA-S General description Features ELM32407LA-S uses advanced trench technology to Vds=-40V provide excellent Rds(on), low gate charge and low gate Id=-18A resistance. Rds(on)
9.22. Size:602K elm
elm32400la.pdf 
Single N-channel MOSFET ELM32400LA-S General description Features ELM32400LA-S uses advanced trench technology to Vds=60V provide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)
9.23. Size:473K elm
elm32412la.pdf 
Single N-channel MOSFET ELM32412LA-S General description Features ELM32412LA-S uses advanced trench technology to Vds=40V provide excellent Rds(on), low gate charge and low gate Id=12A resistance. Rds(on)
Otros transistores... ELM32416LA
, ELM32418LA
, ELM32420LA
, ELM32422LA
, ELM32424LA
, ELM32428LA
, ELM32430LA
, ELM32434LA
, 18N50
, ELM33400CA
, ELM33401CA-S
, ELM33402CA
, ELM33403CA
, ELM33404CA
, ELM33405CA
, ELM33407CA
, ELM33408CA
.
History: SDF9230JAA
| PJD5NA80
| IXFT4N100Q
| SVSP20N60FJDD2
| STF8234
| FMH17N60ES
| GP28S50GN3P