ELM33407CA Todos los transistores

 ..1. Size:588K  elm
 elm33407ca.pdf

Single P-channel MOSFET ELM33407CA-S General description Features ELM33407CA-S uses advanced trench technology to Vds=-20V provide excellent Rds(on), low gate charge and low gate Id=-3A resistance. Rds(on)

 7.1. Size:486K  elm
 elm33403ca.pdf

Single P-channel MOSFET ELM33403CA-S General description Features ELM33403CA-S uses advanced trench technology to Vds=-20V provide excellent Rds(on), low gate charge and low gate Id=-4A resistance. Rds(on)

 7.2. Size:599K  elm
 elm33408ca.pdf

Single N-channel MOSFET ELM33408CA-S General description Features ELM33408CA-S uses advanced trench technology to Vds=20V provide excellent Rds(on), low gate charge and low gate Id=3A resistance. Rds(on)

 7.3. Size:592K  elm
 elm33405ca.pdf

Single P-channel MOSFET ELM33405CA-S General description Features ELM33405CA-S uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-2A resistance. Rds(on)

 7.4. Size:981K  elm
 elm33401ca-s.pdf

Single P-channel MOSFET ELM33401CA-S General description Features ELM33401CA-S uses advanced trench technology to Vds=-20V provide excellent Rds(on), low gate charge and low gate Id=-3A resistance. Rds(on)

 7.5. Size:607K  elm
 elm33404ca.pdf

Single N-channel MOSFET ELM33404CA-S General description Features ELM33404CA-S uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=3A resistance. Rds(on)

 7.6. Size:599K  elm
 elm33402ca.pdf

Single N-channel MOSFET ELM33402CA-S General description Features ELM33402CA-S uses advanced trench technology to Vds=20V provide excellent Rds(on), low gate charge and low gate Id=3A resistance. Rds(on)

 7.7. Size:480K  elm
 elm33400ca.pdf

Single N-channel MOSFET ELM33400CA-S General description Features ELM33400CA-S uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=6A resistance. Rds(on)