JCS7N60S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JCS7N60S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 147 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 80 nS
Cossⓘ - Capacitancia de salida: 115 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de JCS7N60S MOSFET
JCS7N60S Datasheet (PDF)
jcs7n60s jcs7n60b jcs7n60c jcs7n60f.pdf

N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS7N60 \ Package ;NSpe MAIN CHARACTERISTICS ID 7.0 A 600 V VDSS 1.2 &! Rdson@Vgs=10V54 nC Qg APPLICATIONS (u High efficiency switch
jcs7n60v jcs7n60r jcs7n60f jcs7n60c jcs7n60b jcs7n60s.pdf

N RN-CHANNEL MOSFET JCS7N60E MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max1.0 @Vgs=10V Qg-typ 23 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
jcs7n60bb jcs7n60sb jcs7n60cb jcs7n60fb.pdf

N RN-CHANNEL MOSFET JCS7N60B MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max 1.2 @Vgs=10V Qg-typ 25 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L
jcs7n65.pdf

N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS7N65B ;NSpe MAIN CHARACTERISTICS \ Package ID 7.0 A 650 V VDSS 1.3 &! Rdson@Vgs=10V25 nC Qg APPLICATIONS (u High efficiency switch
Otros transistores... FS22SM-9 , FS22SM-12A , FS25SM-10A , FTP14N50C , FTA14N50C , IPA65R1K5CE , ISL9N310AD3 , ISL9N310AD3ST , 12N60 , JCS7N60B , JCS7N60C , JCS7N60F , PHP95N03LT , PHB95N03LT , PHE95N03LT , STP100N6F7 , STP100NF04L .
History: STF10N80K5 | FTK6014A | IPP60R099CPA | P0620ED | SI1040X | SFF23N60S1 | IPB117N20NFD
History: STF10N80K5 | FTK6014A | IPP60R099CPA | P0620ED | SI1040X | SFF23N60S1 | IPB117N20NFD



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
a1695 datasheet | 3415 transistor | 072ne6pt | 2sd388 | 2sc1400 | 2sd331 | 2sc1312 datasheet | 2sb647