JCS7N60B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: JCS7N60B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 147 W
   Voltaje máximo drenador - fuente |Vds|: 600 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 7 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 54 nC
   Tiempo de subida (tr): 80 nS
   Conductancia de drenaje-sustrato (Cd): 115 pF
   Resistencia entre drenaje y fuente RDS(on): 1.2 Ohm
   Paquete / Cubierta: TO-262

Búsqueda de reemplazo de MOSFET JCS7N60B

JCS7N60B Datasheet (PDF)

..1. Size:755K jilin sino
jcs7n60s jcs7n60b jcs7n60c jcs7n60f.pdf

N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS7N60 \ Package ;NSpe MAIN CHARACTERISTICS ID 7.0 A 600 V VDSS 1.2 &! Rdson@Vgs=10V54 nC Qg APPLICATIONS (u High efficiency switch

..2. Size:1774K jilin sino
jcs7n60v jcs7n60r jcs7n60f jcs7n60c jcs7n60b jcs7n60s.pdf

N RN-CHANNEL MOSFET JCS7N60E MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max1.0 @Vgs=10V Qg-typ 23 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

0.1. Size:904K jilin sino
jcs7n60bb jcs7n60sb jcs7n60cb jcs7n60fb.pdf

N RN-CHANNEL MOSFET JCS7N60B MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max 1.2 @Vgs=10V Qg-typ 25 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L

8.1. Size:600K jilin sino
jcs7n65.pdf

N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS7N65B ;NSpe MAIN CHARACTERISTICS \ Package ID 7.0 A 650 V VDSS 1.3 &! Rdson@Vgs=10V25 nC Qg APPLICATIONS (u High efficiency switch

8.2. Size:757K jilin sino
jcs7n65bb jcs7n65sb jcs7n65cb jcs7n65fb.pdf

N RN-CHANNEL MOSFET JCS7N65B MAIN CHARACTERISTICS ID 7.0 A VDSS 650 V Package Rdson-max 1.3 (@Vgs=10V Qg-typ 25 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

8.3. Size:2018K jilin sino
jcs7n65ve jcs7n65re jcs7n65ce jcs7n65se jcs7n65be jcs7n65fe.pdf

N RN-CHANNEL MOSFET JCS7N65E MAIN CHARACTERISTICS Package ID 7.0 A VDSS 650 V Rdson-max1.1 @Vgs=10V Qg-typ 23 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 4N80

Liste

Recientemente añadidas las descripciónes de los transistores: