ELM34402AA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ELM34402AA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 2.5 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 8 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 15 nC
   Tiempo de subida (tr): 17 nS
   Conductancia de drenaje-sustrato (Cd): 220 pF
   Resistencia entre drenaje y fuente RDS(on): 0.02 Ohm
   Paquete / Cubierta: SOP-8

Búsqueda de reemplazo de MOSFET ELM34402AA

ELM34402AA Datasheet (PDF)

..1. Size:654K elm
elm34402aa.pdf

Single N-channel MOSFETELM34402AA-NGeneral description Features ELM34402AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=8A resistance. Rds(on)

7.1. Size:605K elm
elm34404aa.pdf

Single N-channel MOSFETELM34404AA-NGeneral description Features ELM34404AA-N uses advanced trench technology to Vds=60Vprovide excellent Rds(on), low gate charge and low gate Id=5.5A resistance. Rds(on)

7.2. Size:504K elm
elm34400aa.pdf

Single N-channel MOSFETELM34400AA-NGeneral description Features ELM34400AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)

7.3. Size:986K elm
elm34403aa-n.pdf

Single P-channel MOSFETELM34403AA-NGeneral description Features ELM34403AA-N uses advanced trench technology to Vds=-55Vprovide excellent Rds(on), low gate charge and low gate Id=-4.5A resistance. Rds(on)

7.4. Size:249K elm
elm34409aa.pdf

Single P-channel MOSFETELM34409AA-NGeneral description Features ELM34409AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-9A resistance. Rds(on)

7.5. Size:423K elm
elm34401aa.pdf

Single P-channel MOSFETELM34401AA-NGeneral description Features ELM34401AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)

7.6. Size:612K elm
elm34405aa.pdf

Single P-channel MOSFETELM34405AA-NGeneral description Features ELM34405AA-N uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-5.5A resistance. Rds(on)

7.7. Size:420K elm
elm34408aa.pdf

Single N-channel MOSFETELM34408AA-NGeneral description Features ELM34408AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=8A resistance. Rds(on)

7.8. Size:625K elm
elm34407aa.pdf

Single P-channel MOSFETELM34407AA-NGeneral description Features ELM34407AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)

7.9. Size:981K elm
elm34406aa-n.pdf

Single N-channel MOSFETELM34406AA-NGeneral description Features ELM34406AA-N uses advanced trench technology to Vds=40Vprovide excellent Rds(on), low gate charge and low gate Id=7.5A resistance. Rds(on)

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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