ELM34409AA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ELM34409AA
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 410 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: SOP-8

Búsqueda de reemplazo de MOSFET ELM34409AA

ELM34409AA Datasheet (PDF)

..1. Size:249K elm
elm34409aa.pdf

Single P-channel MOSFETELM34409AA-NGeneral description Features ELM34409AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-9A resistance. Rds(on)

7.1. Size:654K elm
elm34402aa.pdf

Single N-channel MOSFETELM34402AA-NGeneral description Features ELM34402AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=8A resistance. Rds(on)

7.2. Size:605K elm
elm34404aa.pdf

Single N-channel MOSFETELM34404AA-NGeneral description Features ELM34404AA-N uses advanced trench technology to Vds=60Vprovide excellent Rds(on), low gate charge and low gate Id=5.5A resistance. Rds(on)

7.3. Size:504K elm
elm34400aa.pdf

Single N-channel MOSFETELM34400AA-NGeneral description Features ELM34400AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)

7.4. Size:986K elm
elm34403aa-n.pdf

Single P-channel MOSFETELM34403AA-NGeneral description Features ELM34403AA-N uses advanced trench technology to Vds=-55Vprovide excellent Rds(on), low gate charge and low gate Id=-4.5A resistance. Rds(on)

7.5. Size:423K elm
elm34401aa.pdf

Single P-channel MOSFETELM34401AA-NGeneral description Features ELM34401AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)

7.6. Size:612K elm
elm34405aa.pdf

Single P-channel MOSFETELM34405AA-NGeneral description Features ELM34405AA-N uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-5.5A resistance. Rds(on)

7.7. Size:420K elm
elm34408aa.pdf

Single N-channel MOSFETELM34408AA-NGeneral description Features ELM34408AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=8A resistance. Rds(on)

7.8. Size:625K elm
elm34407aa.pdf

Single P-channel MOSFETELM34407AA-NGeneral description Features ELM34407AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)

7.9. Size:981K elm
elm34406aa-n.pdf

Single N-channel MOSFETELM34406AA-NGeneral description Features ELM34406AA-N uses advanced trench technology to Vds=40Vprovide excellent Rds(on), low gate charge and low gate Id=7.5A resistance. Rds(on)

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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