ELM51400FA-S Todos los transistores

 

ELM51400FA-S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ELM51400FA-S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 0.35 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 1 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
   Carga de la puerta (Qg): 1.4 nC
   Tiempo de subida (tr): 25 nS
   Conductancia de drenaje-sustrato (Cd): 25 pF
   Resistencia entre drenaje y fuente RDS(on): 0.43 Ohm
   Paquete / Cubierta: SC-70

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ELM51400FA-S Datasheet (PDF)

 ..1. Size:2346K  elm
elm51400fa-s.pdf

ELM51400FA-S
ELM51400FA-S

Single N-channel MOSFETELM51400FA-SGeneral description Features ELM51400FA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=1.0A resistance. Rds(on)

 7.1. Size:1302K  elm
elm51401fa.pdf

ELM51400FA-S
ELM51400FA-S

Single P-channel MOSFETELM51401FA-SGeneral description Features ELM51401FA-S uses advanced trench technology Vds=-20Vto provide excellent Rds(on), low gate charge and Id=-1.0Aoperation with gate voltages as low as 1.8V. Rds(on) = 600m (Vgs=-4.5V) Rds(on) = 800m (Vgs=-2.5V) Rds(on) = 1300m (Vgs=-1.8V)Maximum absolute ratingsParameter Symbol Limi

 7.2. Size:1272K  elm
elm51404fa.pdf

ELM51400FA-S
ELM51400FA-S

Single N-channel MOSFETELM51404FA-SGeneral description Features ELM51404FA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=3.6A resistance. Rds(on) = 82m (Vgs=10V) Rds(on) = 90m (Vgs=4.5V) Rds(on) = 102m (Vgs=2.5V)Maximum absolute ratingsParameter Symbol Limit UnitDrain-source voltage Vds

 7.3. Size:1306K  elm
elm51402fa.pdf

ELM51400FA-S
ELM51400FA-S

Single N-channel MOSFETELM51402FA-SGeneral description Features ELM51402FA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=1.0A resistance. Rds(on)

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History: PMF250XNE

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