2SK1290 Todos los transistores

 

2SK1290 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK1290
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 240 nS
   Cossⓘ - Capacitancia de salida: 750 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: TO220F

 Búsqueda de reemplazo de MOSFET 2SK1290

 

2SK1290 Datasheet (PDF)

 ..1. Size:387K  nec
2sk1290.pdf

2SK1290
2SK1290

 8.1. Size:96K  renesas
rej03g0918 2sk1298ds.pdf

2SK1290
2SK1290

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:369K  nec
2sk1293.pdf

2SK1290
2SK1290

 8.3. Size:362K  nec
2sk1295.pdf

2SK1290
2SK1290

 8.4. Size:374K  nec
2sk1294.pdf

2SK1290
2SK1290

 8.5. Size:374K  nec
2sk1292.pdf

2SK1290
2SK1290

 8.6. Size:52K  hitachi
2sk1297.pdf

2SK1290
2SK1290

2SK1297Silicon N-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid driveOutlineTO-3PD1G231. Gate 2. Drain (Flange) S3. Source2SK1297Absolute Max

 8.7. Size:48K  hitachi
2sk1298.pdf

2SK1290
2SK1290

2SK1298Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid driveOutlineTO-3PFMDG1231. Gate2. Drain3. SourceS2SK1298Absolute Maximum Rat

 8.8. Size:38K  hitachi
2sk1296.pdf

2SK1290
2SK1290

2SK1296Silicon N-Channel MOS FETApplicationTO220ABHigh speed power switchingFeatures Low on-resistance2 High speed switching123 Low drive current 4 V gate drive device1. Gate Can be driven from 5 V source12. Drain Suitable for motor drive, DC-DC converter,(Flange)power switch and solenoid drive3. Source3Table 1 Absolute Maximum

 8.9. Size:48K  hitachi
2sk1299.pdf

2SK1290
2SK1290

2SK1299(L), 2SK1299(S)Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid driveOutlineDPAK-144123123D1. GateG2. Drain3. Source4. D

 8.10. Size:258K  inchange semiconductor
2sk1297.pdf

2SK1290
2SK1290

isc N-Channel MOSFET Transistor 2SK1297FEATURESDrain Current I = 40A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 18m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switch andsolenoid driveABS

 8.11. Size:265K  inchange semiconductor
2sk1298.pdf

2SK1290
2SK1290

isc N-Channel MOSFET Transistor 2SK1298FEATURESDrain Current I = 40A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 18m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.AB

 8.12. Size:261K  inchange semiconductor
2sk1296.pdf

2SK1290
2SK1290

isc N-Channel MOSFET Transistor 2SK1296FEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 8.13. Size:265K  inchange semiconductor
2sk1299s.pdf

2SK1290
2SK1290

isc N-Channel MOSFET Transistor 2SK1299SFEATURESDrain Current I = 3.0A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 350m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

 8.14. Size:274K  inchange semiconductor
2sk1299l.pdf

2SK1290
2SK1290

isc N-Channel MOSFET Transistor 2SK1299LFEATURESDrain Current I = 3.0A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 350m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

Otros transistores... 2SK1282 , 2SK1283 , 2SK1284 , 2SK1285 , 2SK1286 , 2SK1287 , 2SK1288 , 2SK1289 , IRF2807 , 2SK1292 , 2SK1293 , 2SK1294 , 2SK1295 , 2SK1398 , 2SK1399 , 2SK1482 , 2SK1483 .

 

 
Back to Top

 


2SK1290
  2SK1290
  2SK1290
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top