SD10425JAA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SD1047High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 140 V Typical ft = 20 MHz Fully characterized at 125 oCApplication Power supply 321DescriptionTO-3PThe device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain line

Ordering number : ENN694F2SB815 / 2SD1048PNP / NPN Epitaxial Planar Silicon Transistors2SB815 / 2SD1048General-Purpose AF Amplifier ApplicationsFeaturesPackage Dimensions Ultrasmall package allows miniaturizationunit : mmin end products.2018B Large current capacity (IC=0.7A) and low-saturation[2SB815 / 2SD1048]voltage.0.40.1630 to 0.11 0.95 0.95 21.9

Ordering number : ENN65722SB817P / 2SD1047P2SB817P : PNP Epitaxial Planar Silicon Transistor2SD1047P : NPN Triple Diffused Planar Silicon Transistor2SB817P / 2SD1047P140V / 12A, AF80W Output ApplicationsFeaturesPackage Dimensions Capable of being mounted easily because of one- unit : mmpoint fixing type plastic molded package (Inter-2022Achangeable with TO-3).[2SB817P

Ordering number : ENN694F2SB815 / 2SD1048PNP / NPN Epitaxial Planar Silicon Transistors2SB815 / 2SD1048General-Purpose AF Amplifier ApplicationsFeaturesPackage Dimensions Ultrasmall package allows miniaturizationunit : mmin end products.2018B Large current capacity (IC=0.7A) and low-saturation[2SB815 / 2SD1048]voltage.0.40.1630 to 0.11 0.95 0.95 21.9

Ordering number:680FPNP Epitaxial Planar Silicon TransistorsNPN Triple Diffused Planar Silicon Transistors2SB817/2SD1047140V/12A AF 60W Output ApplicationsFeatures Package Dimensions Capable of being mounted easily because of one-unit:mmpoint fixing type plastic molded package (Inter-2022Achangeable with TO-3).[2SB817/2SD1047] Wide ASO because of on-chip ballast re

Ordering number:677DPNP/NPN Epitaxial Planar Silicon Transistors2SB816/2SD1046For LF Power Amplifier, 50W OutputLarge Power Switching ApplicationsFeatures Package Dimensions Capable of being mounted easily because of one-unit:mmpoint fixing type plastic molded package (Inter-2022Achangeable with TO-3).[2SB816/2SD1046] Wide ASO because of built-in ballast resistance

Ordering number : EN694H2SB815/2SD1048Bipolar Transistorhttp://onsemi.com() () ( ) ( )15V, 0.7A, Low VCE sat , PNP NPN Single CPFeatures Ultrasmall package allows miniaturization in end products Large current capacity (IC=0.7A) and low-saturation voltage( ): 2SB815Specifications Absolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCol

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

QSC/L- 000019.2Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN POWER TRANSISTOR CSD1047FTO 3PPlastic PackageBCEComplementary CSB817FAudio Power Amplifier And DC to DC ConverterABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise )DESCRIPTION SYMBOL VALUE MIN TYP MAX UNITCollector -Base Voltage(open emitter) VCBO 160

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1049 DESCRIPTION With TO-3PN package High current, High speed switching High reliability APPLICATIONS Switching regulators Motor controls High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emi

Ordering number : ENN69872SB817C/2SD1047CPNP Epitaxial Planar Silicon TransistorNPN Triple Diffused Planar Silicon Transistor2SB817C/2SD1047C140V / 12A, AF 80W Output ApplicationsFeatures Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process.[2SB817C/2SD1047C]15.63.24.814.02.0

SMD Type TransistorsNPN Transistors2SD1048SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Large current capacity (IC=0.7A) and low-saturation voltage. Complimentary to 2SB8151 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VC

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD1047DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB817APPLICATIONSRecommend for 60W audio frequency amplifier outputstage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

isc Silicon NPN Darlington Power Transistor 2SD1044DESCRIPTIONHigh DC Current Gain: h = 700(Min.)@ I = 1A, V = 4VFE C CEHigh Collector-Emitter Breakdown Voltage-: V = 80V(Min)(BR) CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MA

isc Product Specificationisc Silicon NPN Power Transistor 2SD1047EDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB817EMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for audio frequency a

isc Silicon NPN Power Transistor 2SD1049DESCRIPTIONHigh Current CapabilityFast Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsMotor controlsHigh frequency invertersGeneral purpose power amplifiersAbsolute maximum ratings(Ta=25)SYMBOL PARAMETER VALUE UNIT

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1040DESCRIPTIONHigh Current CapabilityFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching regulators, inverters, wide-band amplifiers and power oscillators in industrial andcommercial application

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1046DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB816Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor LF power amplifier, 50W output

isc Silicon NPN Power Transistor 2SD1047DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB817Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRecommend for 60W audio frequency amplifier outputstage ap

isc Silicon NPN Power Transistor 2SD1047DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB817Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRecommend for 60W audio frequency amplifier outputstage a