ELM53400CA Todos los transistores

 

ELM53400CA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ELM53400CA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 1.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 1.06 nC
   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 20 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
   Paquete / Cubierta: SOT-23

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ELM53400CA Datasheet (PDF)

 ..1. Size:1306K  elm
elm53400ca.pdf

ELM53400CA
ELM53400CA

Single N-channel MOSFETELM53400CA-SGeneral description Features ELM53400CA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=1.8A (Vgs=4.5V)resistance. Rds(on)

 7.1. Size:1264K  elm
elm53402ca.pdf

ELM53400CA
ELM53400CA

Single N-channel MOSFETELM53402CA-SGeneral description Features ELM53402CA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=3.6Aresistance. Rds(on)

 7.2. Size:1303K  elm
elm53401ca.pdf

ELM53400CA
ELM53400CA

Single P-channel MOSFETELM53401CA-SGeneral description Features ELM53401CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-1.8A resistance. Rds(on)

 7.3. Size:1276K  elm
elm53403ca.pdf

ELM53400CA
ELM53400CA

Single P-channel MOSFETELM53403CA-SGeneral description Features ELM53403CA-S uses advanced trench technology to Vds=-60Vprovide excellent Rds(on), low gate charge and low gate Id=-3.6A resistance. Rds(on)

 7.4. Size:1827K  elm
elm53405ca-s.pdf

ELM53400CA
ELM53400CA

Single P-channel MOSFETELM53405CA-SGeneral description Features ELM53405CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-3.6A resistance. Rds(on)

 7.5. Size:1265K  elm
elm53406ca.pdf

ELM53400CA
ELM53400CA

Single N-channel MOSFETELM53406CA-SGeneral description Features ELM53406CA-S uses advanced trench technology to Vds=60Vprovide excellent Rds(on), low gate charge and low gate Id=3.6A (Vgs=10V)resistance. Rds(on)

 7.6. Size:1556K  elm
elm53404ca-s.pdf

ELM53400CA
ELM53400CA

Single N-channel MOSFETELM53404CA-SGeneral description Features ELM53404CA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=3.6Aresistance. Rds(on)

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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