ELM53400CA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ELM53400CA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 1.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 VQgⓘ - Carga de la puerta: 1.06 nC
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 20 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de MOSFET ELM53400CA
ELM53400CA Datasheet (PDF)
elm53400ca.pdf
Single N-channel MOSFETELM53400CA-SGeneral description Features ELM53400CA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=1.8A (Vgs=4.5V)resistance. Rds(on)
elm53402ca.pdf
Single N-channel MOSFETELM53402CA-SGeneral description Features ELM53402CA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=3.6Aresistance. Rds(on)
elm53401ca.pdf
Single P-channel MOSFETELM53401CA-SGeneral description Features ELM53401CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-1.8A resistance. Rds(on)
elm53403ca.pdf
Single P-channel MOSFETELM53403CA-SGeneral description Features ELM53403CA-S uses advanced trench technology to Vds=-60Vprovide excellent Rds(on), low gate charge and low gate Id=-3.6A resistance. Rds(on)
elm53405ca-s.pdf
Single P-channel MOSFETELM53405CA-SGeneral description Features ELM53405CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-3.6A resistance. Rds(on)
elm53406ca.pdf
Single N-channel MOSFETELM53406CA-SGeneral description Features ELM53406CA-S uses advanced trench technology to Vds=60Vprovide excellent Rds(on), low gate charge and low gate Id=3.6A (Vgs=10V)resistance. Rds(on)
elm53404ca-s.pdf
Single N-channel MOSFETELM53404CA-SGeneral description Features ELM53404CA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=3.6Aresistance. Rds(on)
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F