ELM544599A Todos los transistores

 ..1. Size:2807K  elm
 elm544599a.pdf

Complementary MOSFET ELM544599A-N General Description Features ELM544599A-N uses advanced trench technology N-channel to provide excellent Rds(on) and low gate charge. Vds=40V, Id=8.0A, Rds(on)=22m (Vgs=10V) Vds=40V, Id=6.0A, Rds(on)=28m (Vgs=4.5V) P-channel Vds=-40V, Id=-7.2A, Rds(on)=42m (Vgs=-10V) Vds=-40V, Id=-6.2A, Rds(on)=60m (Vgs=-4.5V) Maximum Abso

 7.1. Size:1738K  elm
 elm544539a.pdf

Complementary MOSFET ELM544539A-N General Description Features ELM544539A-N uses advanced trench technology N-channel to provide excellent Rds(on) and low gate charge. Vds=30V, Id=5.0A, Rds(on)=36m (Vgs=10V) Vds=30V, Id=4.7A, Rds(on)=46m (Vgs=4.5V) P-channel Vds=-30V, Id=-5.4A, Rds(on)=62m (Vgs=-10V) Vds=-30V, Id=-4.2A, Rds(on)=90m (Vgs=-4.5V) Maximum Absol

 8.1. Size:1276K  elm
 elm544634a.pdf

 9.1. Size:1172K  elm
 elm549407a.pdf

Single P-channel MOSFET ELM549407A-N General description Features ELM549407A-N uses advanced trench technology to Vds=-60V provide excellent Rds(on), low gate charge and low gate Id=-4.6A resistance. Rds(on)

 9.2. Size:377K  elm
 elm54801aa.pdf

Dual P-channel MOSFET ELM54801AA-N General description Features ELM54801AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on) and low gate charge. Id=-5A (Vgs=-10V) Rds(on)