F5042-S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: F5042-S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 7 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.8 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
   Paquete / Cubierta: TO-252

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F5042-S Datasheet (PDF)

..1. Size:419K fuji
f5042-s.pdf

0. Cautions Although Fuji Electric Device Technology is continually improving product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric Device Technology semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing physical injury, fire, or other

9.1. Size:40K fuji
f5016 f5017 f5018 f5019 f5020 f5021 f5022 f5023 f5028 f5029 f5030 f5031 f5032 f5033 f5038 f5041 f5042 f5043 f5044 f9202 f9203 f9206 f9207 f9208 f9209.pdf

MOSFET / Pwer MOSFETs MOSFET Pwer MOSFET F TI F T VDSS ID ID (pulse) RDS (on) PD VGSS VGS (th) Device type Max. Typ. Package Net massVolts Amps. Amps. Ohms () Watts Volts Volts GramsF5018 40 8 - 0.14 15 - - K-pack 0.6F5019 40 12 - 0.14 30 - - T-pack 1.6F5020 40 3

9.2. Size:214K fuji
f5042.pdf

http://www.fujisemi.comF5042 FUJI Intelligent Power MOSFETIntelligent Power MOSFETFeatures Outline drawings [mm] Connection Over temperature protectionK-pack(s) Short circuit protection Low on-resistance High speed switchingApplications Solenoid driver Lamp driver Replacements for fuse and relayMaximum ratings and characteristics Absolute maximum

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