FC4B22180L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FC4B22180L
Código: 17
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.4 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.4 VQgⓘ - Carga de la puerta: 23 nC
trⓘ - Tiempo de subida: 1600 nS
Cossⓘ - Capacitancia de salida: 200 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0119 Ohm
Paquete / Cubierta: MLGA004
Búsqueda de reemplazo de MOSFET FC4B22180L
FC4B22180L Datasheet (PDF)
fc4b22180l.pdf
Doc No. TT4-EA-14949Revision. 1Product StandardsMOS FETFC4B22180LFC4B22180LGate resistor installed Dual N-channel MOS FETUnit: mm For lithium-ion secondary battery protection circuits1.744 3 Features Low source-source ON resistance:Rss(on) typ. = 9.4 mVGS = 4.5 V)1 2 CSPChip Size Package) RoHS compliant (EU RoHS / MSL:Level 1 compliant)0.3 Marking S
fc4b22070l.pdf
Doc No. TT4-EA-14580Revision. 2Product StandardsMOS FETFC4B22070LFC4B22070LGate resistor installed Dual N-channel MOS FETUnit: mm For lithium-ion secondary battery protection circuits1.674 3 Features Low source-source ON resistance:Rss(on) typ. = 17.5 m VGS = 4.5 V)1 2 CSP package:smallest & thinnest size RoHS compliant (EU RoHS / MSL:Level 1 compliant)0.
fc4b21080l.pdf
Doc No. TT4-EA-14176Revision. 2Product StandardsMOS FETFC4B21080LFC4B21080LGate resistor installed Dual N-channel MOS FETPackage dimension Unit: mmFor lithium-ion secondary battery protection circuits1.114 3 Features1 2 Low source-source ON resistance:Rss(on) typ. = 27 m VGS = 4.5 V) CSP package:smallest & thinnest size RoHS compliant (EU Ro
fc4b21320l.pdf
Doc No. TT4-EA-15001Revision. 1Product StandardsMOS FETFC4B21320LFC4B21320LGate resistor installed Dual N-channel MOS FETUnit: mm For lithium-ion secondary battery protection circuits0.84 3 Features Source-source ON resistance:Rss(on) typ. = 36 mVGS = 4.5 V)1 2 CSP(Chip Size Package) RoHS compliant (EU RoHS / MSL:Level 1 compliant) 0.2 Mark
fc4b21300l.pdf
Doc No. TT4-EA-15010Revision. 1Product StandardsMOS FETFC4B21300LFC4B21300LGate resistor installed Dual N-channel MOS FETUnit: mm For lithium-ion secondary battery protection circuits0.64 3 Features Source-source ON resistance:Rss(on) typ. = 70 mVGS = 4.5 V) CSP(Chip Size Package)1 2 RoHS compliant (EU RoHS / MSL:Level 1 compliant)0.15 Ma
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918