FC4B22180L Todos los transistores

 

FC4B22180L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FC4B22180L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 1600 nS

Cossⓘ - Capacitancia de salida: 200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0119 Ohm

Encapsulados: MLGA004

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FC4B22180L datasheet

 ..1. Size:3138K  panasonic
fc4b22180l.pdf pdf_icon

FC4B22180L

Doc No. TT4-EA-14949 Revision. 1 Product Standards MOS FET FC4B22180L FC4B22180L Gate resistor installed Dual N-channel MOS FET Unit mm For lithium-ion secondary battery protection circuits 1.74 4 3 Features Low source-source ON resistance Rss(on) typ. = 9.4 m VGS = 4.5 V) 1 2 CSP Chip Size Package) RoHS compliant (EU RoHS / MSL Level 1 compliant) 0.3 Marking S

 8.1. Size:663K  panasonic
fc4b22070l.pdf pdf_icon

FC4B22180L

Doc No. TT4-EA-14580 Revision. 2 Product Standards MOS FET FC4B22070L FC4B22070L Gate resistor installed Dual N-channel MOS FET Unit mm For lithium-ion secondary battery protection circuits 1.67 4 3 Features Low source-source ON resistance Rss(on) typ. = 17.5 m VGS = 4.5 V) 1 2 CSP package smallest & thinnest size RoHS compliant (EU RoHS / MSL Level 1 compliant) 0.

 9.1. Size:466K  panasonic
fc4b21080l.pdf pdf_icon

FC4B22180L

Doc No. TT4-EA-14176 Revision. 2 Product Standards MOS FET FC4B21080L FC4B21080L Gate resistor installed Dual N-channel MOS FET Package dimension Unit mm For lithium-ion secondary battery protection circuits 1.11 4 3 Features 1 2 Low source-source ON resistance Rss(on) typ. = 27 m VGS = 4.5 V) CSP package smallest & thinnest size RoHS compliant (EU Ro

 9.2. Size:2560K  panasonic
fc4b21320l.pdf pdf_icon

FC4B22180L

Doc No. TT4-EA-15001 Revision. 1 Product Standards MOS FET FC4B21320L FC4B21320L Gate resistor installed Dual N-channel MOS FET Unit mm For lithium-ion secondary battery protection circuits 0.8 4 3 Features Source-source ON resistance Rss(on) typ. = 36 m VGS = 4.5 V) 1 2 CSP(Chip Size Package) RoHS compliant (EU RoHS / MSL Level 1 compliant) 0.2 Mark

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