FC6B21150L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FC6B21150L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.45 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10.5 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5200 nS
Cossⓘ - Capacitancia de salida: 450 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0051 Ohm
Paquete / Cubierta: MLGA006
Búsqueda de reemplazo de MOSFET FC6B21150L
FC6B21150L Datasheet (PDF)
fc6b21150l.pdf
Doc No. TT4-EA-14950Revision. 1Product StandardsMOS FETFC6B21150LFC6B21150LGate resistor installed Dual N-channel MOS FETUnit: mm For lithium-ion secondary battery protection circuits2.146 5 4 Features Low source-source ON resistance:Rss(on) typ. = 4.0 mVGS = 4.5 V)1 2 3 CSPChip Size Package) RoHS compliant (EU RoHS / MSL:Level 1 compliant)0.3 Marki
fc6b21100l.pdf
Doc No. TT4-EA-14512Revision. 2Product StandardsMOS FETFC6B21100LFC6B21100LGate resistor installed Dual N-channel MOS FETUnit: mmFor lithium-ion secondary battery protection circuits2.676 5 4 Features Low source-source ON resistance:Rss(on) typ. = 4.5 m VGS = 4.5 V)1 2 3 CSP package:smallest & thinnest size RoHS compliant (EU RoHS / MSL:Level 1 co
fc6b22100l.pdf
Doc No. TT4-EA-14734Revision. 2Product StandardsMOS FETFC6B22100LFC6B22100LGate resistor installed Dual N-channel MOS FETUnit: mmFor lithium-ion secondary battery protection circuits2.566 5 4 Features Low source-source ON resistance:Rss(on) typ. = 8.2 m VGS = 4.5 V)1 2 3 CSP package:smallest & thinnest size RoHS compliant (EU RoHS / MSL:Level 1 co
fc6b22220l.pdf
Doc No. TT4-EA-14847Revision. 1Product StandardsMOS FETFC6B22220LFC6B22220LGate resistor installed Dual N-channel MOS FETUnit: mmFor lithium-ion secondary battery protection circuits2.566 5 4 Features Low source-source ON resistance:Rss(on) typ. = 8.2 m VGS = 4.5 V)1 2 3 CSP package:smallest & thinnest size RoHS compliant (EU RoHS / MSL:Level 1 compliant)
fc6b22090l.pdf
Doc No. TT4-EA-14513Revision. 1Product StandardsMOS FETFC6B22090LFC6B22090LGate resistor installed Dual N-channel MOS FETUnit: mmFor lithium-ion secondary battery protection circuits2.566 5 4 Features Low source-source ON resistance:Rss(on) typ. = 8.5 m VGS = 4.5 V)1 2 3 CSP package:smallest & thinnest size RoHS compliant (EU RoHS / MSL:Level 1 co
fc6b22160l.pdf
Doc No. TT4-EA-14964Revision. 1Product StandardsMOS FETFC6B22160LFC6B22160LGate resistor installed Dual N-channel MOS FETUnit: mm For lithium-ion secondary battery protection circuits2.656 5 4 Features Low source-source ON resistance:Rss(on) typ. = 4.7 mVGS = 4.5 V)1 2 3 CSP(Chip Size Package) RoHS compliant (EU RoHS / MSL:Level 1 compliant)0.
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: AO8822
History: AO8822
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918