FC8V22080L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FC8V22080L
Código: 4D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 24 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.4 VQgⓘ - Carga de la puerta: 7.8 nC
trⓘ - Tiempo de subida: 600 nS
Cossⓘ - Capacitancia de salida: 85 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0162 Ohm
Paquete / Cubierta: WMINI8-F1
Búsqueda de reemplazo de MOSFET FC8V22080L
FC8V22080L Datasheet (PDF)
fc8v22080l.pdf
Doc No. TT4-EA-14491Revision. 3Product StandardsMOS FETFC8V22080LFC8V22080LGate resistor installed Dual N-channel MOS FETUnit: mm2.9For lithium-ion secondary battery protection circuits0.3 0.168 7 6 5 Features Low drain-source ON resistance:Rds(on) typ. = 13 mVGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:Level 1
fc8v22090l.pdf
Doc No. TT4-EA-14490Revision. 3Product StandardsMOS FETFC8V22090LFC8V22090LGate resistor installed Dual N-channel MOS FETUnit: mm2.9For lithium-ion secondary battery protection circuits0.3 0.168 7 6 5 Features Low drain-source ON resistance:Rds(on) typ. = 9.5 m VGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:Level
fc8v2204.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).FC8V2204Silicon N-channel MOS FETFor lithium-ion secondary battery protection circuits Overview Package CodeN-channel dual type MOS FET in a compact surface mount type package. WMini8-F1 FeaturesPackage dimension clicks here. Click! Low drain-source ON resistance: RDS(on) typ. = 10.5 mW (VGS = 4
fc8v22280l.pdf
Doc No. TT4-EA-15018Revision. 2Product StandardsMOS FETFC8V22280LFC8V22280LGate resistor installed Dual N-channel MOS FETUnit: mm2.9For lithium-ion secondary battery protection circuits0.3 0.168 7 6 5 Features Source-source ON Resistance:Rss(on) typ. = 9.8 mVGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / M
fc8v22290l.pdf
Doc No. TT4-EA-15019Revision. 2Product StandardsMOS FETFC8V22290LFC8V22290LGate resistor installed Dual N-channel MOS FETUnit: mm2.9For lithium-ion secondary battery protection circuits0.3 0.168 7 6 5 Features Source-source ON Resistance:Rss(on) typ. = 11.5 mVGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 /
fc8v22300l.pdf
Doc No. TT4-EA-15020Revision. 2Product StandardsMOS FETFC8V22300LFC8V22300LGate resistor installed Dual N-channel MOS FETUnit: mm2.9For lithium-ion secondary battery protection circuits0.3 0.168 7 6 5 Features Source-source ON Resistance:Rss(on) typ. = 15 mWVGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:
fc8v22150l.pdf
Doc No. TT4-EA-14832Revision. 1Product StandardsMOS FETFC8V22150LFC8V22150LGate resistor installed Dual N-channel MOS FETUnit: mm2.9For lithium-ion secondary battery protection circuits0.3 0.168 7 6 5 Features Low drain-source ON resistance:Rds(on) typ. = 9.0 m VGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0
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