FK8V0606 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FK8V0606
   Código: M1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 7 nC
   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
   Paquete / Cubierta: SC-115

Búsqueda de reemplazo de MOSFET FK8V0606

FK8V0606 Datasheet (PDF)

..1. Size:703K panasonic
fk8v0606.pdf

Doc No. TT4-EA-14590Revision. 2Product StandardsMOS FETFK8V06060LFK8V06060LSingle N-channel MOS FETUnit: mm For lithium-ion secondary battery protection circuits2.9For load switching0.3 0.168 7 6 5 Features Low drain-source ON resistance:RDS(on) typ. = 70 mVGS = 4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)1

8.1. Size:2576K panasonic
fk8v0612.pdf

Doc No. TT4-EA-14981Revision. 1Product StandardsMOS FETFK8V06120LFK8V06120LSingle N-channel MOS FET Package dimensionUnit: mmFor lithium-ion secondary battery protection circuitsFor load switching 2.90.3 0.168 7 6 5 Features Low drain-source ON resistance:RDS(on) typ. = 50 m (VGS = 4.5 V) Low drive voltage: 2.5 V drive RoHS compliant (EU RoHS / UL-9

9.1. Size:264K panasonic
fk8v0302.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).FK8V0302Silicon N-channel MOS FETFor lithium-ion secondary battery protection circuits Overview PackageFK8V0302 is N-channel single type small signal MOS FET adopted small Codesize surface mounting package. WMini8-F1Package dimension clicks here. Click! Features Low drain-source ON resistance: RD

9.2. Size:389K panasonic
fk8v03050l.pdf

Doc No. TT4-EA-13029Revision. 3Product StandardsMOS FETFK8V03050LFK8V03050LSilicon N-channel MOSFETUnit: mm For lithium-ion secondary battery protecion circuit2.9For DC-DC Converter0.3 0.168 7 6 5 Features Low drain-source On-state Resistance RDS(on) typ = 16 m (VGS = 4.5 V) High-speed switching : Qg = 5.1 nC Halogen-free / RoHS compliant1 2 3

9.3. Size:404K panasonic
fk8v0306.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).FK8V0306Silicon N-channel MOS FETFor DC-DC converter circuits Overview Package N-channel single type, MOS FET in a compact surface mount type package. Code WMini8-F1 FeaturesPackage dimension clicks here. Click! Low drain-source ON resistance: RDS(on) typ. = 15 mW (VGS = 10 V) High-speed swi

9.4. Size:275K panasonic
fk8v0303.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).FK8V0303Silicon N-channel MOS FETFor DC-DC Converter circuits Overview PackageFK8V0303 is N-channel single type small signal MOS FET adopted small Codesize surface mounting package. WMini8-F1Package dimension clicks here. Click! Features Low drain-source ON resistance: RDS(on) typ. = 8 mW (VGS =

9.5. Size:397K panasonic
fk8v0304 fk8v03040l.pdf

Doc No. TT4-EA-13169Revision. 3Product StandardsMOS FETFK8V03040LFK8V03040LSilicon N-channel MOSFETUnit: mm For lithium-ion secondary battery protecion circuit2.90.3 0.16For DC-DC Converter8 7 6 5 Features Low drain-source On-state Resistance RDS(on) typ = 11 m (VGS = 4.5 V) High-speed switching : Qg = 7.2 nC Halogen-free / RoHS compliant1 2 3

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