FKI06051 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FKI06051
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 42 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 69 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 94.7 nC
Tiempo de subida (tr): 11.3 nS
Conductancia de drenaje-sustrato (Cd): 665 pF
Resistencia entre drenaje y fuente RDS(on): 0.0049 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de MOSFET FKI06051
FKI06051 Datasheet (PDF)
fki06051.pdf
60 V, 69 A, 3.9 m Low RDS(ON) N ch Trench Power MOSFET FKI06051 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 69 A RDS(ON) ---------- 4.9 m max. (VGS = 10 V, ID = 55.0 A) Qg ------44.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 55.0 A) Low Total Gate Charge
fki06051.pdf
isc N-Channel MOSFET Transistor FKI06051FEATURESDrain Current I =69A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 4.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
fki06075.pdf
60 V, 52 A, 5.1 m Low RDS(ON) N ch Trench Power MOSFET FKI06075 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 52 A RDS(ON) ---------- 6.6 m max. (VGS = 10 V, ID = 39.0 A) Qg ------26.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 39.0 A) Low Total Gate Charge
fki06075.pdf
isc N-Channel MOSFET Transistor FKI06075FEATURES Drain-source on-resistance:RDS(on) 8m@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh fast switching Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 VD
fki06190.pdf
60 V, 30 A, 12.1 m Low RDS(ON) N ch Trench Power MOSFET FKI06190 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 30 A RDS(ON) -------- 16.5 m max. (VGS = 10 V, ID = 19.8 A) Qg ------- 9.1 nC (VGS = 4.5 V, VDS = 30 V, ID = 19.8 A) Low Total Gate Charge
fki06108.pdf
60 V, 39 A, 7.0 m Low RDS(ON) N ch Trench Power MOSFET FKI06108 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 39 A RDS(ON) ---------- 9.2 m max. (VGS = 10 V, ID = 28.5 A) Qg ------16.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 28.5 A) Low Total Gate Charge
fki06269.pdf
60 V, 24 A, 17.2 m Low RDS(ON) N ch Trench Power MOSFET FKI06269 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 24 A RDS(ON) -------- 22.6 m max. (VGS = 10 V, ID = 15.8 A) Qg ------- 6.6 nC (VGS = 4.5 V, VDS = 30 V, ID = 15.8 A) Low Total Gate Charge
fki06190.pdf
isc N-Channel MOSFET Transistor FKI06190FEATURESDrain Current I =30A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R =16.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
fki06108.pdf
isc N-Channel MOSFET Transistor FKI06108FEATURESDrain Current I =39A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R =9.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
fki06269.pdf
isc N-Channel MOSFET Transistor FKI06269FEATURESDrain Current I =24A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R =22.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
