FKI06108 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FKI06108
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 38 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 39 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 36.2 nC
   Tiempo de subida (tr): 5 nS
   Conductancia de drenaje-sustrato (Cd): 280 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0092 Ohm
   Paquete / Cubierta: TO-220F

Búsqueda de reemplazo de MOSFET FKI06108

FKI06108 Datasheet (PDF)

..1. Size:333K sanken-ele
fki06108.pdf

60 V, 39 A, 7.0 m Low RDS(ON) N ch Trench Power MOSFET FKI06108 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 39 A RDS(ON) ---------- 9.2 m max. (VGS = 10 V, ID = 28.5 A) Qg ------16.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 28.5 A) Low Total Gate Charge

..2. Size:252K inchange semiconductor
fki06108.pdf

isc N-Channel MOSFET Transistor FKI06108FEATURESDrain Current I =39A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R =9.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

8.1. Size:263K sanken-ele
fki06190.pdf

60 V, 30 A, 12.1 m Low RDS(ON) N ch Trench Power MOSFET FKI06190 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 30 A RDS(ON) -------- 16.5 m max. (VGS = 10 V, ID = 19.8 A) Qg ------- 9.1 nC (VGS = 4.5 V, VDS = 30 V, ID = 19.8 A) Low Total Gate Charge

8.2. Size:252K inchange semiconductor
fki06190.pdf

isc N-Channel MOSFET Transistor FKI06190FEATURESDrain Current I =30A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R =16.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

9.1. Size:263K sanken-ele
fki06051.pdf

60 V, 69 A, 3.9 m Low RDS(ON) N ch Trench Power MOSFET FKI06051 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 69 A RDS(ON) ---------- 4.9 m max. (VGS = 10 V, ID = 55.0 A) Qg ------44.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 55.0 A) Low Total Gate Charge

9.2. Size:263K sanken-ele
fki06075.pdf

60 V, 52 A, 5.1 m Low RDS(ON) N ch Trench Power MOSFET FKI06075 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 52 A RDS(ON) ---------- 6.6 m max. (VGS = 10 V, ID = 39.0 A) Qg ------26.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 39.0 A) Low Total Gate Charge

9.3. Size:263K sanken-ele
fki06269.pdf

60 V, 24 A, 17.2 m Low RDS(ON) N ch Trench Power MOSFET FKI06269 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 24 A RDS(ON) -------- 22.6 m max. (VGS = 10 V, ID = 15.8 A) Qg ------- 6.6 nC (VGS = 4.5 V, VDS = 30 V, ID = 15.8 A) Low Total Gate Charge

9.4. Size:252K inchange semiconductor
fki06051.pdf

isc N-Channel MOSFET Transistor FKI06051FEATURESDrain Current I =69A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 4.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

9.5. Size:245K inchange semiconductor
fki06075.pdf

isc N-Channel MOSFET Transistor FKI06075FEATURES Drain-source on-resistance:RDS(on) 8m@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh fast switching Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 VD

9.6. Size:252K inchange semiconductor
fki06269.pdf

isc N-Channel MOSFET Transistor FKI06269FEATURESDrain Current I =24A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R =22.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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