FKI06269 Todos los transistores

 ..1. Size:263K  sanken-ele
 fki06269.pdf

60 V, 24 A, 17.2 m Low RDS(ON) N ch Trench Power MOSFET FKI06269 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 24 A RDS(ON) -------- 22.6 m max. (VGS = 10 V, ID = 15.8 A) Qg ------- 6.6 nC (VGS = 4.5 V, VDS = 30 V, ID = 15.8 A) Low Total Gate Charge

 ..2. Size:252K  inchange semiconductor
 fki06269.pdf

isc N-Channel MOSFET Transistor FKI06269 FEATURES Drain Current I =24A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R =22.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.1. Size:263K  sanken-ele
 fki06190.pdf

60 V, 30 A, 12.1 m Low RDS(ON) N ch Trench Power MOSFET FKI06190 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 30 A RDS(ON) -------- 16.5 m max. (VGS = 10 V, ID = 19.8 A) Qg ------- 9.1 nC (VGS = 4.5 V, VDS = 30 V, ID = 19.8 A) Low Total Gate Charge

 9.2. Size:333K  sanken-ele
 fki06108.pdf

60 V, 39 A, 7.0 m Low RDS(ON) N ch Trench Power MOSFET FKI06108 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 39 A RDS(ON) ---------- 9.2 m max. (VGS = 10 V, ID = 28.5 A) Qg ------16.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 28.5 A) Low Total Gate Charge

 9.3. Size:263K  sanken-ele
 fki06051.pdf

60 V, 69 A, 3.9 m Low RDS(ON) N ch Trench Power MOSFET FKI06051 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 69 A RDS(ON) ---------- 4.9 m max. (VGS = 10 V, ID = 55.0 A) Qg ------44.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 55.0 A) Low Total Gate Charge

 9.4. Size:263K  sanken-ele
 fki06075.pdf

60 V, 52 A, 5.1 m Low RDS(ON) N ch Trench Power MOSFET FKI06075 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 52 A RDS(ON) ---------- 6.6 m max. (VGS = 10 V, ID = 39.0 A) Qg ------26.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 39.0 A) Low Total Gate Charge

 9.5. Size:252K  inchange semiconductor
 fki06190.pdf

isc N-Channel MOSFET Transistor FKI06190 FEATURES Drain Current I =30A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R =16.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.6. Size:252K  inchange semiconductor
 fki06108.pdf

isc N-Channel MOSFET Transistor FKI06108 FEATURES Drain Current I =39A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R =9.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.7. Size:252K  inchange semiconductor
 fki06051.pdf

isc N-Channel MOSFET Transistor FKI06051 FEATURES Drain Current I =69A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 4.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.8. Size:245K  inchange semiconductor
 fki06075.pdf

isc N-Channel MOSFET Transistor FKI06075 FEATURES Drain-source on-resistance RDS(on) 8m @10V Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High fast switching Power Supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 60 V D