FKI10198 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FKI10198
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 40 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 31 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 57.7 nC
   Tiempo de subida (tr): 6.5 nS
   Conductancia de drenaje-sustrato (Cd): 300 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0184 Ohm
   Paquete / Cubierta: TO-220F

Búsqueda de reemplazo de MOSFET FKI10198

FKI10198 Datasheet (PDF)

..1. Size:260K sanken-ele
fki10198.pdf

100 V, 31 A, 13.2 m Low RDS(ON) N ch Trench Power MOSFET FKI10198 Features Package V(BR)DSS -------------------------------- 100 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 31 A RDS(ON) -------- 18.4 m max. (VGS = 10 V, ID = 23.4 A) Qg ------27.1 nC (VGS = 4.5 V, VDS = 50 V, ID = 23.4 A) Low Total Gate Charge

..2. Size:252K inchange semiconductor
fki10198.pdf

isc N-Channel MOSFET Transistor FKI10198FEATURESDrain Current I =31A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =18.4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

8.1. Size:260K sanken-ele
fki10126.pdf

100 V, 41 A, 8.8 m Low RDS(ON) N ch Trench Power MOSFET FKI10126 Features Package V(BR)DSS -------------------------------- 100 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 41 A RDS(ON) -------- 12.1 m max. (VGS = 10 V, ID = 33.0 A) Qg ------ 45.2nC (VGS = 4.5 V, VDS = 50 V, ID = 33.0 A) Low Total Gate Charge

8.2. Size:251K inchange semiconductor
fki10126.pdf

isc N-Channel MOSFET Transistor FKI10126FEATURESDrain Current I =41A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =12.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

9.1. Size:260K sanken-ele
fki10531.pdf

100 V, 18 A, 34.7 m Low RDS(ON) N ch Trench Power MOSFET FKI10531 Features Package V(BR)DSS -------------------------------- 100 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 18 A RDS(ON) -------- 54.5 m max. (VGS = 10 V, ID = 11.9 A) Qg ------- 9.0 nC (VGS = 4.5 V, VDS = 50 V, ID = 11.9 A) Low Total Gate Charge

9.2. Size:1101K sanken-ele
fki10300.pdf

100 V, 23 A, 20.2 m Low RDS(ON) N ch Trench Power MOSFET FKI10300 Features Package V(BR)DSS -------------------------------- 100 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 23 A RDS(ON) -------- 28.8 m max. (VGS = 10 V, ID = 17.1 A) Qg ------16.9 nC (VGS = 4.5 V, VDS = 50 V, ID = 17.1 A) Low Total Gate Charge

9.3. Size:245K inchange semiconductor
fki10300-220.pdf

isc N-Channel MOSFET Transistor FKI10300FEATURESLow drain-source on-resistance:RDS(on) 28.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDC-DC convertersSynchronous rectificationPower suppliesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

9.4. Size:252K inchange semiconductor
fki10531.pdf

isc N-Channel MOSFET Transistor FKI10531FEATURESDrain Current I =18A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =54.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

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