FL6L5206 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FL6L5206
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.54 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 30 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
Paquete / Cubierta: WSSMINI6-F1
Búsqueda de reemplazo de MOSFET FL6L5206
FL6L5206 Datasheet (PDF)
fl6l5206.pdf
Doc No. TT4-EA-13066Revision. 2Product StandardsMOS FETFL6L52060LFL6L52060LSilicon P-channel MOSFET(FET)Unit : mm Silicon epitaxial planar type(SBD)1.6For switching0.2 0.13For DC-DC Converter6 5 4 Features Low drain-source ON resistance : RDS (on) typ. = 80 m ( VGS = -4.0 V ) Low drive voltage : 1.8 V drive Halogen-free / RoHS compliant(EU RoHS / UL-94
fl6l52010l.pdf
Doc No. TT4-EA-12746Revision. 2Product StandardsMOS FETFL6L52010LFL6L52010LSilicon P-channel MOSFET(FET)Unit : mm Silicon epitaxial planar type(SBD)1.6For switching0.2 0.13For DC-DC Converter6 5 4 Features Low drain-source ON resistance : RDS (on) typ. = 80 m ( VGS = -4.0 V ) Low drive voltage : 1.8 V drive Halogen-free / RoHS compliant(EU RoHS
fl6l5207.pdf
Doc No. TT4-EA-13067Revision. 2Product StandardsMOS FETFL6L52070LFL6L52070LSilicon P-channel MOSFET(FET)Unit : mm Silicon epitaxial planar type(SBD)1.6For switching0.2 0.13For DC-DC Converter6 5 4 Features Low drain-source ON resistance : RDS (on) typ. = 300 m ( VGS = -4.0 V ) Low drive voltage : 2.5 V drive Halogen-free / RoHS compliant(EU RoH
fl6l5203.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).FL6L5203Silicon P-channel MOS FET (FET)Silicon epitaxial planar type (SBD)For DC-DC converter circuitsFor switching circuits Overview PackageFL6L5203 is P-channel type MOS FET with Schottky Brrier Diode in small Codesize surface mouting pakcage. WSSMini6-F1 Package dimension clicks here.
fl6l5201.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).FL6L5201Silicon P-channel MOS FET (FET)Silicon epitaxial planar type (SBD)For switching circuitsFor DC-DC converter circuits Overview PackageFL6L5201 is P-channel single type small signal MOS FET with SBD Codeemployed small size surface mounting package. WSSMini6-F1Package dimension clicks here. Click!
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918