SLP10N70C Todos los transistores

 

SLP10N70C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SLP10N70C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 270 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20.2 nS

Cossⓘ - Capacitancia de salida: 164 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.1 Ohm

Encapsulados: TO220

 Búsqueda de reemplazo de SLP10N70C MOSFET

- Selecciónⓘ de transistores por parámetros

 

SLP10N70C datasheet

 ..1. Size:1390K  maple semi
 slp10n70c slf10n70c.pdf pdf_icon

SLP10N70C

SLP10N70C/SLF10N70C 700V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 10A, 700V, RDS(on) typ. = 0.9 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 40nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching

 8.1. Size:1218K  maple semi
 slp10n60c slf10n60c.pdf pdf_icon

SLP10N70C

SLP10N60C / SLF10N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 10A, 600V, RDS(on)typ. = 0.62 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 36.5nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switchi

 8.2. Size:1189K  maple semi
 slp10n65c slf10n65c.pdf pdf_icon

SLP10N70C

SLP10N65C / SLF10N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 10A, 650V, RDS(on) typ. = 0.678 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 38nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switchi

 8.3. Size:666K  maple semi
 slp10n65s slf10n65s.pdf pdf_icon

SLP10N70C

LEAD FREE Pb RoHS SLP10N65S/ SLF10N65S 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 10A, 650V, RDS(on) typ=0.8 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 28.5nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switchi

MOSTRAR MÁS

Otros transistores... FM6L52020L, SWP3205, SWP10N65, SWF10N65, ST16N10, SPP80N06S2-08, SPB80N06S2-08, SPI80N06S2-08, IRFB4110, SLF10N70C, PTW40N50, PJM90H09NTF, HY1606P, HY1606B, HS50N06PA, FS14UM-10, DMG4712SSS

 

 

 

 

↑ Back to Top
.