SLP10N70C Todos los transistores

 

SLP10N70C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SLP10N70C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 270 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20.2 nS
   Cossⓘ - Capacitancia de salida: 164 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.1 Ohm
   Paquete / Cubierta: TO220
 

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SLP10N70C Datasheet (PDF)

 ..1. Size:1390K  maple semi
 slp10n70c slf10n70c.pdf pdf_icon

SLP10N70C

SLP10N70C/SLF10N70C700V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 700V, RDS(on) typ. = 0.9@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 40nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching

 8.1. Size:1218K  maple semi
 slp10n60c slf10n60c.pdf pdf_icon

SLP10N70C

SLP10N60C / SLF10N60C600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 600V, RDS(on)typ. = 0.62@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 36.5nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchi

 8.2. Size:1189K  maple semi
 slp10n65c slf10n65c.pdf pdf_icon

SLP10N70C

SLP10N65C / SLF10N65C650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on) typ. = 0.678@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 38nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchi

 8.3. Size:666K  maple semi
 slp10n65s slf10n65s.pdf pdf_icon

SLP10N70C

LEAD FREEPbRoHSSLP10N65S/ SLF10N65S650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on) typ=0.8@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 28.5nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switchi

MOSTRAR MÁS

Otros transistores... FM6L52020L , SWP3205 , SWP10N65 , SWF10N65 , ST16N10 , SPP80N06S2-08 , SPB80N06S2-08 , SPI80N06S2-08 , IRF640N , SLF10N70C , PTW40N50 , PJM90H09NTF , HY1606P , HY1606B , HS50N06PA , FS14UM-10 , DMG4712SSS .

History: FDC2512F095 | HSM1562 | RU30J30M3 | IRFR3709ZT | WMJ4N150D1 | TMA7N60H | MTB30P06VT4G

 

 
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