CHM04N10ZPT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CHM04N10ZPT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
Encapsulados: SOT223
Búsqueda de reemplazo de CHM04N10ZPT MOSFET
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CHM04N10ZPT datasheet
chm04n10zpt.pdf
SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Drain Gate Static Max. Gate Zero to to Drain Drain to Source Threshold Gate Voltage Equivalent Source Source Current On Outline Voltage Drain Current TYPE Marking Circuit Voltage Voltage Resistance No. Diagram VDSS VGSS ID(DC) RDS(ON) @ ID / VGS VGS(th) IDSS @ VDS,VGS=0V V V mA ohmS mA / V V uA V
chm04n6ngp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM04N6NGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 600 Volts CURRENT 4 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. (D2PAK) 0.420(10.67) 0.190(4.83) * High density cell design for extremely low RDS(ON). 0.380(9.69) 0.160(4.
chm0410jgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM0410JGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 3.4 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High power
Otros transistores... DMG4712SSS, BRCS4435SC, B0210D, 2SK4119LS, 2SK4098LS, 3N128, 3N143, APM2509NU, AON7408, DTP4503, IRF60R217, PFP12N65, PFF12N65, PK6D0BA, SVF830T, SVF830D, SVF830MJ
History: HUF75639S3
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