NTB5426NT4G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTB5426NT4G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 215 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 100 nS
Cossⓘ - Capacitancia de salida: 1000 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
Paquete / Cubierta: D2PAK
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NTB5426NT4G Datasheet (PDF)
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Otros transistores... NTB4302 , NTB45N06G , NTB45N06LG , NTB52N10G , NTB5404NT4G , NTB5405NG , NTB5411NT4G , NTB5412NT4G , K2611 , NTB5605PG , NTB5860N , NTB5860NL , NTB60N06G , NTB60N06L , NTB6410ANG , NTB6411ANG , NTB6412ANG .
History: STB12NK80Z | FHD80N07A | OSG55R160HZF | IRFH8334PBF-1 | NP80N04NLG | FQAF34N25
History: STB12NK80Z | FHD80N07A | OSG55R160HZF | IRFH8334PBF-1 | NP80N04NLG | FQAF34N25



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