NTD20P06L-001 Todos los transistores

 

NTD20P06L-001 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTD20P06L-001
   Código: 20P06L
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 65 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 15.5 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
   Carga de la puerta (Qg): 15 nC
   Tiempo de subida (tr): 90 nS
   Conductancia de drenaje-sustrato (Cd): 207 pF
   Resistencia entre drenaje y fuente RDS(on): 0.15 Ohm
   Paquete / Cubierta: DPAK

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NTD20P06L-001 Datasheet (PDF)

 ..1. Size:146K  onsemi
ntd20p06l-001 ntd20p06l-1g ntd20p06lg ntd20p06lt4g ntdv20p06l.pdf

NTD20P06L-001 NTD20P06L-001

NTD20P06L, NTDV20P06LPower MOSFET-60 V, -15.5 A, Single P-Channel, DPAKFeatures Withstands High Energy in Avalanche and Commutation Modeshttp://onsemi.com Low Gate Charge for Fast Switching AEC Q101 Qualified - NTDV20P06LID MAX These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) TYP (Note 1)Applications -60 V 130 mW @ -5.0 V -15.5 A Bridge Cir

 4.1. Size:112K  onsemi
ntd20p06l-d.pdf

NTD20P06L-001 NTD20P06L-001

NTD20P06LPower MOSFET-60 V, -15.5 A, Single P-Channel, DPAKFeatures Withstands High Energy in Avalanche and Commutation Modeshttp://onsemi.com Low Gate Charge for Fast Switching These are Pb-Free DevicesID MAXV(BR)DSS RDS(on) TYP (Note 1)Applications Bridge Circuits-60 V 130 mW @ -5.0 V -15.5 A Power Supplies, Power Motor Controls DC-DC Conversion

 5.1. Size:139K  onsemi
ntd20p06l ntdv20p06l.pdf

NTD20P06L-001 NTD20P06L-001

NTD20P06L, NTDV20P06LMOSFET Power, Single,P-Channel, DPAK-60 V, -15.5 AFeatureswww.onsemi.com Withstands High Energy in Avalanche and Commutation Modes Low Gate Charge for Fast SwitchingID MAX AEC Q101 Qualified - NTDV20P06LV(BR)DSS RDS(on) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant-60 V 130 mW @ -5.0 V -15.5 AApplications Bridge

 5.2. Size:870K  cn vbsemi
ntd20p06l.pdf

NTD20P06L-001 NTD20P06L-001

NTD20P06Lwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Sym

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