NTD20P06LT4G Todos los transistores

 

NTD20P06LT4G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTD20P06LT4G
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 65 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15.5 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 90 nS
   Cossⓘ - Capacitancia de salida: 207 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
   Paquete / Cubierta: DPAK
 

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NTD20P06LT4G Datasheet (PDF)

 ..1. Size:146K  onsemi
ntd20p06l-001 ntd20p06l-1g ntd20p06lg ntd20p06lt4g ntdv20p06l.pdf pdf_icon

NTD20P06LT4G

NTD20P06L, NTDV20P06LPower MOSFET-60 V, -15.5 A, Single P-Channel, DPAKFeatures Withstands High Energy in Avalanche and Commutation Modeshttp://onsemi.com Low Gate Charge for Fast Switching AEC Q101 Qualified - NTDV20P06LID MAX These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) TYP (Note 1)Applications -60 V 130 mW @ -5.0 V -15.5 A Bridge Cir

 5.1. Size:112K  onsemi
ntd20p06l-d.pdf pdf_icon

NTD20P06LT4G

NTD20P06LPower MOSFET-60 V, -15.5 A, Single P-Channel, DPAKFeatures Withstands High Energy in Avalanche and Commutation Modeshttp://onsemi.com Low Gate Charge for Fast Switching These are Pb-Free DevicesID MAXV(BR)DSS RDS(on) TYP (Note 1)Applications Bridge Circuits-60 V 130 mW @ -5.0 V -15.5 A Power Supplies, Power Motor Controls DC-DC Conversion

 5.2. Size:139K  onsemi
ntd20p06l ntdv20p06l.pdf pdf_icon

NTD20P06LT4G

NTD20P06L, NTDV20P06LMOSFET Power, Single,P-Channel, DPAK-60 V, -15.5 AFeatureswww.onsemi.com Withstands High Energy in Avalanche and Commutation Modes Low Gate Charge for Fast SwitchingID MAX AEC Q101 Qualified - NTDV20P06LV(BR)DSS RDS(on) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant-60 V 130 mW @ -5.0 V -15.5 AApplications Bridge

 5.3. Size:870K  cn vbsemi
ntd20p06l.pdf pdf_icon

NTD20P06LT4G

NTD20P06Lwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Sym

Otros transistores... NTD20N03L27G , NTD20N06-001 , NTD20N06-1G , NTD20N06G , NTD20N06LG , NTD20P06L-001 , NTD20P06L-1G , NTD20P06LG , 10N60 , NTD23N03R , NTD24N06-001 , NTD24N06G , NTD24N06LG , NTD25P03L1 , NTD25P03LRLG , NTD2955-1G , NTD2955G .

History: STD64N4F6AG | JCS24N50ABH | WMJ90N65C4 | ME25N15AL-G | IPP60R022S7 | SI3812DV | SSSF11NS65UF

 

 
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