NTD25P03LRLG Todos los transistores

 

NTD25P03LRLG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTD25P03LRLG

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 37 nS

Cossⓘ - Capacitancia de salida: 290 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.072 Ohm

Encapsulados: DPAK

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NTD25P03LRLG datasheet

 ..1. Size:160K  onsemi
ntd25p03l ntd25p03l1 ntd25p03lrlg.pdf pdf_icon

NTD25P03LRLG

NTD25P03L Power MOSFET -25 Amp, -30 Volt Logic Level P-Channel DPAK Designed for low voltage, high speed switching applications and to http //onsemi.com withstand high energy in the avalanche and commutation modes. The source-to-drain diode recovery time is comparable to a discrete fast V(BR)DSS RDS(on) Typ ID Max recovery diode. -30 V 51 mW @ 5.0 V -25 A Features Pb-Free Packag

 5.1. Size:112K  onsemi
ntd25p03l std25p03l.pdf pdf_icon

NTD25P03LRLG

NTD25P03L, STD25P03L Power MOSFET -25 A, -30 V, Logic Level P-Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source-to-drain diode recovery time is comparable to a discrete http //onsemi.com fast recovery diode. V(BR)DSS RDS(on) Typ ID Max Features -30 V 51 mW @ 5.0 V -25 A S Prefix

 5.2. Size:837K  cn vbsemi
ntd25p03lg.pdf pdf_icon

NTD25P03LRLG

NTD25P03LG www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.033 at VGS = - 10 V - 26 100 % Rg Tested RoHS - 30 19 nC COMPLIANT 100 % UIS Tested 0.046 at VGS = - 4.5 V - 21 APPLICATIONS Load Switch Notebook Adaptor Switch S TO-252 G G D S D Top View P-

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