NTD3055-094-1G Todos los transistores

 

NTD3055-094-1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTD3055-094-1G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 32.3 nS
   Cossⓘ - Capacitancia de salida: 107 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.094 Ohm
   Paquete / Cubierta: DPAK
 

 Búsqueda de reemplazo de NTD3055-094-1G MOSFET

   - Selección ⓘ de transistores por parámetros

 

NTD3055-094-1G Datasheet (PDF)

 ..1. Size:144K  onsemi
ntd3055-094-1 ntd3055-094-1g.pdf pdf_icon

NTD3055-094-1G

NTD3055-094Power MOSFET12 A, 60 V, N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) Lower VDS(on) 60 V 94 mW 12 A Lower and Tighter VSD Lower Diode Reverse Recovery TimeN-Channel Lower Reve

 3.1. Size:146K  onsemi
ntd3055-094 nvd3055-094.pdf pdf_icon

NTD3055-094-1G

NTD3055-094, NVD3055-094MOSFET Power,N-Channel, DPAK/IPAK12 A, 60 VDesigned for low voltage, high speed switching applications in powersupplies, converters and power motor controls and bridge circuits.http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) Lower VDS(on)60 V 94 mW 12 A Lower and Tighter VSD Lower Diode Reverse Recovery Time D

 3.2. Size:147K  onsemi
ntd3055-094.pdf pdf_icon

NTD3055-094-1G

NTD3055-094Power MOSFET12 A, 60 V, N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) Lower VDS(on) 60 V 94 mW 12 A Lower and Tighter VSD Lower Diode Reverse Recovery TimeN-Channel Lower Reve

 6.1. Size:123K  onsemi
ntd3055-150 nvd3055-150.pdf pdf_icon

NTD3055-094-1G

NTD3055-150,NVD3055-150Power MOSFET9.0 A, 60 V, N-Channel DPAK/IPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgewww.onsemi.comcircuits.9.0 AMPERES, 60 VOLTSFeaturesRDS(on) = 122 mW (Typ) NVD Prefix for Automotive and Other Applications RequiringDUnique Site and Control Change Requirements

Otros transistores... NTD24N06-001 , NTD24N06G , NTD24N06LG , NTD25P03L1 , NTD25P03LRLG , NTD2955-1G , NTD2955G , NTD3055-094-1 , STP75NF75 , NTD3055-150T4 , NTD3055L104T4G , NTD3055L170T4G , NTD30N02G , NTD32N06 , NTD32N06-001 , NTD32N06L , NTD32N06LG .

History: NDP610AE | BLM9435 | STD20NF06LT4 | RFD3055LESM | 8N70 | NP80N04DHE | STD13N60M2

 

 
Back to Top

 


 
.