NTD3055-094-1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTD3055-094-1G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 48 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 32.3 nS
Cossⓘ - Capacitancia de salida: 107 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.094 Ohm
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de MOSFET NTD3055-094-1G
NTD3055-094-1G Datasheet (PDF)
ntd3055-094-1 ntd3055-094-1g.pdf
NTD3055-094Power MOSFET12 A, 60 V, N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) Lower VDS(on) 60 V 94 mW 12 A Lower and Tighter VSD Lower Diode Reverse Recovery TimeN-Channel Lower Reve
ntd3055-094 nvd3055-094.pdf
NTD3055-094, NVD3055-094MOSFET Power,N-Channel, DPAK/IPAK12 A, 60 VDesigned for low voltage, high speed switching applications in powersupplies, converters and power motor controls and bridge circuits.http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) Lower VDS(on)60 V 94 mW 12 A Lower and Tighter VSD Lower Diode Reverse Recovery Time D
ntd3055-094.pdf
NTD3055-094Power MOSFET12 A, 60 V, N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) Lower VDS(on) 60 V 94 mW 12 A Lower and Tighter VSD Lower Diode Reverse Recovery TimeN-Channel Lower Reve
ntd3055-150 nvd3055-150.pdf
NTD3055-150,NVD3055-150Power MOSFET9.0 A, 60 V, N-Channel DPAK/IPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgewww.onsemi.comcircuits.9.0 AMPERES, 60 VOLTSFeaturesRDS(on) = 122 mW (Typ) NVD Prefix for Automotive and Other Applications RequiringDUnique Site and Control Change Requirements
ntd3055-150.pdf
NTD3055-150Power MOSFET9.0 A, 60 V, N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeatures9.0 AMPERES, 60 VOLTS Pb-Free Packages are AvailableRDS(on) = 122 mW (Typ)Typical ApplicationsN-Channel Power SuppliesD Converters Power Motor Co
ntd3055-150t4.pdf
NTD3055-150Power MOSFET9.0 A, 60 V, N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeatures9.0 AMPERES, 60 VOLTS Pb-Free Packages are AvailableRDS(on) = 122 mW (Typ)Typical ApplicationsN-Channel Power SuppliesD Converters Power Motor Co
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918