NTD3055-150T4 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTD3055-150T4 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 28.8 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 9 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 37.1 nS
Cossⓘ - Capacitancia de salida: 70 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
Encapsulados: DPAK
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NTD3055-150T4 datasheet
ntd3055-150t4.pdf
NTD3055-150 Power MOSFET 9.0 A, 60 V, N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http //onsemi.com Features 9.0 AMPERES, 60 VOLTS Pb-Free Packages are Available RDS(on) = 122 mW (Typ) Typical Applications N-Channel Power Supplies D Converters Power Motor Co
ntd3055-150 nvd3055-150.pdf
NTD3055-150, NVD3055-150 Power MOSFET 9.0 A, 60 V, N-Channel DPAK/IPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge www.onsemi.com circuits. 9.0 AMPERES, 60 VOLTS Features RDS(on) = 122 mW (Typ) NVD Prefix for Automotive and Other Applications Requiring D Unique Site and Control Change Requirements
ntd3055-150.pdf
NTD3055-150 Power MOSFET 9.0 A, 60 V, N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http //onsemi.com Features 9.0 AMPERES, 60 VOLTS Pb-Free Packages are Available RDS(on) = 122 mW (Typ) Typical Applications N-Channel Power Supplies D Converters Power Motor Co
ntd3055-094 nvd3055-094.pdf
NTD3055-094, NVD3055-094 MOSFET Power, N-Channel, DPAK/IPAK 12 A, 60 V Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http //onsemi.com Features V(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) Lower VDS(on) 60 V 94 mW 12 A Lower and Tighter VSD Lower Diode Reverse Recovery Time D
Otros transistores... NTD24N06G, NTD24N06LG, NTD25P03L1, NTD25P03LRLG, NTD2955-1G, NTD2955G, NTD3055-094-1, NTD3055-094-1G, IRF630, NTD3055L104T4G, NTD3055L170T4G, NTD30N02G, NTD32N06, NTD32N06-001, NTD32N06L, NTD32N06LG, NTD3808N-1G
Parámetros del MOSFET. Cómo se afectan entre sí.
History: JMSH1018AC | SRH03P098LMTR-G | CEN2301 | AM7481P | APT8043SFLLG | DH060N08D | APJ10N65P
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