NTD4813NH-1G Todos los transistores

 

NTD4813NH-1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTD4813NH-1G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 19.5 nS
   Cossⓘ - Capacitancia de salida: 201 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
   Paquete / Cubierta: DPAK IPAK
     - Selección de transistores por parámetros

 

NTD4813NH-1G Datasheet (PDF)

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NTD4813NH-1G

NTD4813NH, NVD4813NHPower MOSFET30 V, 40 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RGV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable - NVD4813NH These Devices are Pb-Free and are RoHS Comp

 4.1. Size:294K  onsemi
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NTD4813NH-1G

NTD4813NHPower MOSFET30 V, 40 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RGV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices13 m @10VApplications30 V40 A25.9 m @4.5 V CPU Power Delivery

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NTD4813NH-1G

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NTD4813NH-1G

NTD4813NPower MOSFET30 V, 40 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications13 m @10V CPU Power Delivery30 V40 A24 m @4.5 V DC--DC Co

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History: NTB6410AN | SDF1NA60 | FCP290N80

 

 
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