NTD4855N-1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTD4855N-1G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 66.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 98 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 31.48 nS
   Cossⓘ - Capacitancia de salida: 740 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0043 Ohm
   Paquete / Cubierta: DPAK IPAK

Búsqueda de reemplazo de MOSFET NTD4855N-1G

NTD4855N-1G Datasheet (PDF)

..1. Size:262K onsemi
ntd4855n-1g ntd4855n-d.pdf

NTD4855NPower MOSFET25 V, 98 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices4.3 m @10V25 V98 AApplications6.0 m @4.5 V VCORE Ap

8.1. Size:143K onsemi
ntd4858n.pdf

NTD4858NMOSFET Power, Single,N-Channel, DPAK/IPAK25 V, 73 AFeatureshttp://onsemi.com Trench Technology Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(ON) MAX ID MAX Low Capacitance to Minimize Driver Losses6.2 mW @ 10 V Optimized Gate Charge to Minimize Switching Losses25 V73 A These are Pb-Free Devices 9.3 mW @ 4.5 VApplications D VC

8.2. Size:300K onsemi
ntd4858n-1g ntd4858n.pdf

NTD4858NPower MOSFET25 V, 73 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices6.2 m @10V25 V73 AApplications9.3 m @4.5 V VCORE Ap

8.3. Size:271K onsemi
ntd4857n-1g ntd4857n.pdf

NTD4857NPower MOSFET25 V, 78 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices5.7 m @10V25 V78 AApplications8.0 m @4.5 V VCORE Ap

8.4. Size:155K onsemi
ntd4856n-1g.pdf

NTD4856N, NVD4856NPower MOSFET25 V, 89 A, Single N-Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX NVD Prefix for Automotive and Other Applications Requiring4.7 mW @ 10 VUnique Site

8.5. Size:296K onsemi
ntd4856n.pdf

NTD4856NPower MOSFET25 V, 89 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices4.7 m @10V25 V89 AApplications6.8 m @4.5 V VCORE Ap

8.6. Size:296K onsemi
ntd4854n-1g.pdf

NTD4854NPower MOSFET25 V, 128 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices3.6 m @10V25 V128 AApplications4.7 m @4.5 V VCORE

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