NTD4970N-1G
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTD4970N-1G
Código: 4970N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 24.6
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 30
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 36
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5
V
Qgⓘ - Carga de la puerta: 8.2
nC
trⓘ - Tiempo de subida: 27.6
nS
Cossⓘ - Capacitancia
de salida: 306
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011
Ohm
Paquete / Cubierta:
DPAK
IPAK
- Selección de transistores por parámetros
NTD4970N-1G
Datasheet (PDF)
..1. Size:113K onsemi
ntd4970n-1g.pdf 
NTD4970NPower MOSFET30 V, 36 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com Three Package Variations for Design Flexibility These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompl
6.1. Size:140K onsemi
ntd4970n.pdf
NTD4970NPower MOSFET30 V, 36 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com Three Package Variations for Design Flexibility These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompl
9.1. Size:123K 1
ntd4963ng.pdf
NTD4963NPower MOSFET30 V, 44 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS9.6
9.2. Size:86K onsemi
ntd4904n.pdf
NTD4904NPower MOSFET30 V, 79 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications 3.7 mW @ 10 V30 V 79 A5.5 mW @ 4.5 V CPU Power Delivery DC-DC Conv
9.3. Size:123K onsemi
ntd4906n.pdf
NTD4906NPower MOSFET30 V, 54 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications5.5 mW @ 10 V CPU Power Delivery30 V 54 A8.0 mW @ 4.5 V DC-DC Con
9.4. Size:118K onsemi
ntd4969n-d.pdf
NTD4969NPower MOSFET30 V, 41 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS9.0
9.5. Size:114K onsemi
ntd4969n-1g.pdf
NTD4969NPower MOSFET30 V, 41 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS9.0
9.6. Size:82K onsemi
ntd4969n.pdf
NTD4969NPower MOSFET30 V, 41 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS9.0
9.7. Size:115K onsemi
ntd4963n-1g.pdf
NTD4963NPower MOSFET30 V, 44 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com Three Package Variations for Design Flexibility These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompl
9.8. Size:141K onsemi
ntd4904n-1g ntd4904n.pdf
NTD4904NPower MOSFET30 V, 79 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications 3.7 mW @ 10 V30 V 79 A5.5 mW @ 4.5 V CPU Power Delivery DC-DC Conv
9.9. Size:112K onsemi
ntd4965n-d.pdf
NTD4965NPower MOSFET30 V, 68 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.7
9.10. Size:140K onsemi
ntd4913n.pdf
NTD4913NPower MOSFET30 V, 32 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications10.5 mW @ 10 V CPU Power Delivery30 V 32 A15 mW @ 4.5 V DC-DC Con
9.11. Size:138K onsemi
ntd4910n-1g.pdf
NTD4910NPower MOSFET30 V, 37 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications9.0 mW @ 10 V CPU Power Delivery30 V 37 A13 mW @ 4.5 V DC-DC Conv
9.12. Size:138K onsemi
ntd4960n-1g.pdf
NTD4960NPower MOSFET30 V, 55 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS8.0
9.13. Size:107K onsemi
ntd4965n-1g.pdf
NTD4965NPower MOSFET30 V, 68 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.7
9.14. Size:138K onsemi
ntd4909n-1g ntd4909n.pdf
NTD4909NPower MOSFET30 V, 41 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications8.0 mW @ 10 V CPU Power Delivery30 V 41 A12 mW @ 4.5 V DC-DC Conv
9.15. Size:137K onsemi
ntd4909n.pdf
NTD4909NMOSFET Power, Single,N-Channel, DPAK/IPAK30 V, 41 AFeatures Low RDS(on) to Minimize Conduction Losses http://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices8.0 mW @ 10 V30 V 41 A12 mW @ 4.5 VApplications CPU Power DeliveryD DC-
9.16. Size:108K onsemi
ntd4910n.pdf
NTD4910NPower MOSFET30 V, 37 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications9.0 mW @ 10 V CPU Power Delivery30 V 37 A13 mW @ 4.5 V DC-DC Conv
9.17. Size:139K onsemi
ntd4963n.pdf
NTD4963NPower MOSFET30 V, 44 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com Three Package Variations for Design Flexibility These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompl
Otros transistores... FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, GMM3x120-0075X2-SMD
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, CS150N03A8
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
, FDMS3610S
, GWM100-0085X1-SMD
, FDMS3606S
, GWM100-01X1-SL
.
History: 6N65KG-TA3-T
