NTD5862N-1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTD5862N-1G
Código: 5862N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 115 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 98 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 82 nC
Tiempo de subida (tr): 70 nS
Conductancia de drenaje-sustrato (Cd): 500 pF
Resistencia entre drenaje y fuente RDS(on): 0.0057 Ohm
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de MOSFET NTD5862N-1G
NTD5862N-1G Datasheet (PDF)
ntd5862n-1g.pdf
NTD5862N, NTP5862NN-Channel Power MOSFET60 V, 98 A, 5.7 mWFeatures Low RDS(on)http://onsemi.com High Current Capability 100% Avalanche TestedV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free and are RoHS Compliant60 V 5.7 mW @ 10 V 98 AMAXIMUM RATINGS (TJ = 25C unless otherwise noted)DParameter Symbol Value UnitDrain-to-Source Voltage
ntd5862n-d.pdf
NTD5862NN-Channel Power MOSFET60 V, 90 A, 5.7 mWFeatures Low RDS(on)http://onsemi.com High Current Capability 100% Avalanche Tested These Devices are Pb-Free, Halogen Free and are RoHS CompliantV(BR)DSS RDS(on) MAX ID MAX60 V 5.7 mW @ 10 V 90 AMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Value UnitDDrain-to-Source Voltage VDSS 60 V
ntd5862n ntp5862n.pdf
NTD5862N, NTP5862NMOSFET Power,N-Channel60 V, 98 A, 5.7 mWFeatureswww.onsemi.com Low RDS(on)V(BR)DSS RDS(on) MAX ID MAX High Current Capability60 V 5.7 mW @ 10 V 98 A 100% Avalanche Tested These Devices are Pb-Free, Halogen Free and are RoHS CompliantDMAXIMUM RATINGS (TJ = 25C unless otherwise noted)N-ChannelParameter Symbol Value UnitGDrain-t
ntd5865n-1g.pdf
NTD5865NN-Channel Power MOSFET60 V, 38 A, 18 mWFeatures Low Gate Charge Fast Switchinghttp://onsemi.com High Current Capability 100% Avalanche TestedV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free and are RoHS Compliant60 V 18 mW @ 10 V 38 AMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Value UnitDDrain-to-Sou
ntd5867nl.pdf
NTD5867NLN-Channel Power MOSFET60 V, 20 A, 39 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant39 mW @ 10 V 20 A60 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)50 mW @ 4.5 V 18 AParameter Symbol Value UnitDDrai
ntd5865n-d.pdf
NTD5865NN-Channel Power MOSFET60 V, 38 A, 18 mWFeatures Low Gate Charge Fast Switchinghttp://onsemi.com High Current Capability 100% Avalanche TestedV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free and are RoHS Compliant60 V 18 mW @ 10 V 38 AMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Value UnitDDrain-to-Sou
ntd5867nl-1g.pdf
NTD5867NLN-Channel Power MOSFET60 V, 20 A, 39 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant V(BR)DSS RDS(on) MAX ID MAX39 mW @ 10 V 20 AMAXIMUM RATINGS (TJ = 25C unless otherwise noted)60 V50 mW @ 4.5 V 18 AParameter Symbol Value UnitDrain-to
ntd5865nl.pdf
NTD5865NLN--Channel Power MOSFET60 V, 40 A, 16 mFeatures Low Gate Charge Fast Switchinghttp://onsemi.com High Current Capability 100% Avalanche TestedV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb--Free, Halogen Free and are RoHS Compliant16 m @10VMAXIMUM RATINGS (TJ =25C unless otherwise noted) 60 V 40 A19 m @4.5 VParameter Symbol Value Uni
ntd5865nl-1g.pdf
NTD5865NL-1Gwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.011 at VGS = 10 V 55 Material categorization:600.012 at VGS = 4.5 V 47TO-251DGSN-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Sy
ntd5865nlt4g.pdf
NTD5865NLT4Gwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Lim
ntd5867nl.pdf
NTD5867NLwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise not
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