NTD5862N-1G Todos los transistores

 ..1. Size:115K  onsemi
 ntd5862n-1g.pdf

NTD5862N, NTP5862N N-Channel Power MOSFET 60 V, 98 A, 5.7 mW Features Low RDS(on) http //onsemi.com High Current Capability 100% Avalanche Tested V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free and are RoHS Compliant 60 V 5.7 mW @ 10 V 98 A MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) D Parameter Symbol Value Unit Drain-to-Source Voltage

 5.1. Size:112K  onsemi
 ntd5862n-d.pdf

NTD5862N N-Channel Power MOSFET 60 V, 90 A, 5.7 mW Features Low RDS(on) http //onsemi.com High Current Capability 100% Avalanche Tested These Devices are Pb-Free, Halogen Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 60 V 5.7 mW @ 10 V 90 A MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value Unit D Drain-to-Source Voltage VDSS 60 V

 6.1. Size:137K  onsemi
 ntd5862n ntp5862n.pdf

NTD5862N, NTP5862N MOSFET Power, N-Channel 60 V, 98 A, 5.7 mW Features www.onsemi.com Low RDS(on) V(BR)DSS RDS(on) MAX ID MAX High Current Capability 60 V 5.7 mW @ 10 V 98 A 100% Avalanche Tested These Devices are Pb-Free, Halogen Free and are RoHS Compliant D MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) N-Channel Parameter Symbol Value Unit G Drain-t

 8.1. Size:137K  onsemi
 ntd5865n-1g.pdf

NTD5865N N-Channel Power MOSFET 60 V, 38 A, 18 mW Features Low Gate Charge Fast Switching http //onsemi.com High Current Capability 100% Avalanche Tested V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free and are RoHS Compliant 60 V 18 mW @ 10 V 38 A MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value Unit D Drain-to-Sou

 8.2. Size:102K  onsemi
 ntd5867nl.pdf

NTD5867NL N-Channel Power MOSFET 60 V, 20 A, 39 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 39 mW @ 10 V 20 A 60 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 50 mW @ 4.5 V 18 A Parameter Symbol Value Unit D Drai

 8.3. Size:108K  onsemi
 ntd5865n-d.pdf

NTD5865N N-Channel Power MOSFET 60 V, 38 A, 18 mW Features Low Gate Charge Fast Switching http //onsemi.com High Current Capability 100% Avalanche Tested V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free and are RoHS Compliant 60 V 18 mW @ 10 V 38 A MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value Unit D Drain-to-Sou

 8.4. Size:106K  onsemi
 ntd5867nl-1g.pdf

NTD5867NL N-Channel Power MOSFET 60 V, 20 A, 39 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 39 mW @ 10 V 20 A MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 60 V 50 mW @ 4.5 V 18 A Parameter Symbol Value Unit Drain-to

 8.5. Size:269K  onsemi
 ntd5865nl.pdf

NTD5865NL N--Channel Power MOSFET 60 V, 40 A, 16 m Features Low Gate Charge Fast Switching http //onsemi.com High Current Capability 100% Avalanche Tested V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb--Free, Halogen Free and are RoHS Compliant 16 m @10V MAXIMUM RATINGS (TJ =25 C unless otherwise noted) 60 V 40 A 19 m @4.5 V Parameter Symbol Value Uni

 8.6. Size:743K  cn vbsemi
 ntd5865nl-1g.pdf

NTD5865NL-1G www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.011 at VGS = 10 V 55 Material categorization 60 0.012 at VGS = 4.5 V 47 TO-251 D G S N-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Sy

 8.7. Size:824K  cn vbsemi
 ntd5865nlt4g.pdf

NTD5865NLT4G www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Lim

 8.8. Size:835K  cn vbsemi
 ntd5867nl.pdf

NTD5867NL www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise not