SPP80N06S2-09 Todos los transistores

 

SPP80N06S2-09 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPP80N06S2-09
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 190 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 29 nS
   Cossⓘ - Capacitancia de salida: 610 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0091 Ohm
   Paquete / Cubierta: TO220
 

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SPP80N06S2-09 datasheet

 ..1. Size:516K  infineon
spb80n06s2-09 spp80n06s2-09.pdf pdf_icon

SPP80N06S2-09

SPP80N06S2-09 Preliminary data SPB80N06S2-09 OptiMOS =Power-Transistor = == Product Summary Feature VDS 55 V N-Channel RDS(on) 9.1 m Enhancement mode ID 80 A 175 C operating temperature P-TO263-3-2 P-TO220-3-1 Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP80N06S2-09 P-TO220-3-1 Q67060-S6025 2N0609 SPB80N06S2-09 P-TO263-3-2 Q67060-S6027 2N0609 Maxi

 2.1. Size:345K  infineon
spp80n06s2-05 spb80n06s2-05.pdf pdf_icon

SPP80N06S2-09

www.DataSheet4U.com SPP80N06S2-05 SPB80N06S2-05 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) max. SMD version 4.8 m Enhancement mode ID 80 A 175 C operating temperature P- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP80N06S2-05 P- TO220 -3-1 Q67040-S4245 2N0605 SPB80N06S2-05

 2.2. Size:419K  infineon
spp80n06s2-08 spb80n06s2-08 spi80n06s2-08.pdf pdf_icon

SPP80N06S2-09

SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) 8 m Enhancement mode ID 80 A 175 C operating temperature P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP80N06S2-08 P- TO220 -3-1 Q67060-S4283 2N0608 SPB80N06S2-08 P- TO263 -

 4.1. Size:311K  infineon
spp80n06s2l-09 spb80n06s2l-09.pdf pdf_icon

SPP80N06S2-09

SPP80N06S2L-09 SPB80N06S2L-09 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) 8.5 m Enhancement mode ID 80 A Logic Level P- TO263 -3-2 P- TO220 -3-1 175 C operating temperature Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP80N06S2L-09 P- TO220 -3-1 Q67060-S6031 2N06L09 SPB80N06S2L-09 P- TO263 -3-2

Otros transistores... DFP50N06 , HY3208P , HY3208M , HY3208B , HY3208PS , HY3208PM , PK502BA , SP8M3 , AO4407A , SPB80N06S2-09 , SST4091 , SST4092 , SST4093 , SVF2N65F , TPHR8504PL , TSF65R300S1 , UFZ24NL-TA3 .

History: FQD4N25 | APM4430 | TSM3455CX6 | DHS020N04 | IXFH67N10 | IXTH102N20T | JCS6N90GDA

 

 
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