NTDV20N06L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTDV20N06L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 98 nS
Cossⓘ - Capacitancia de salida: 224 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.048 Ohm
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de NTDV20N06L MOSFET
NTDV20N06L datasheet
ntd20n06l ntdv20n06l.pdf
NTD20N06L, NTDV20N06L Power MOSFET 20 A, 60 V, Logic Level, N-Channel DPAK/IPAK Designed for low voltage, high speed switching applications in www.onsemi.com power supplies, converters and power motor controls and bridge circuits. V(BR)DSS RDS(on) TYP ID MAX Features 20 A 60 V 39 mW@5.0 V AEC Q101 Qualified - NTDV20N06L (Note 1) These Devices are Pb-Free and are RoHS Compli
ntdv20n06l.pdf
NTD20N06L, NTDV20N06L Power MOSFET 20 A, 60 V, Logic Level, N-Channel DPAK/IPAK Designed for low voltage, high speed switching applications in http //onsemi.com power supplies, converters and power motor controls and bridge circuits. V(BR)DSS RDS(on) TYP ID MAX Features 20 A 60 V 39 mW@5.0 V AEC Q101 Qualified - NTDV20N06L (Note 1) These Devices are Pb-Free and are RoHS Com
ntdv20n06.pdf
NTD20N06, NTDV20N06 Power MOSFET 20 A, 60 V, N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features http //onsemi.com Lower RDS(on) Lower VDS(on) V(BR)DSS RDS(on) TYP ID MAX Lower Capacitances 60 V 37.5 mW 20 A Lower Total Gate Charge Lower and Tighter VSD N
ntd20p06l-001 ntd20p06l-1g ntd20p06lg ntd20p06lt4g ntdv20p06l.pdf
NTD20P06L, NTDV20P06L Power MOSFET -60 V, -15.5 A, Single P-Channel, DPAK Features Withstands High Energy in Avalanche and Commutation Modes http //onsemi.com Low Gate Charge for Fast Switching AEC Q101 Qualified - NTDV20P06L ID MAX These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) TYP (Note 1) Applications -60 V 130 mW @ -5.0 V -15.5 A Bridge Cir
Otros transistores... NTD85N02R-001 , NTD85N02R-1G , NTD85N02RT4 , NTD95N02R , NTD95N02R-1G , NTD95N02RT4 , NTDV18N06LT4G , NTDV20N06 , IRLB4132 , NTDV20P06L , NTDV3055L104 , NTDV5804N , NTF2955PT1G , NTF2955T1G , NTF3055-100T1 , NTF3055-160T1 , NTF3055-160T3LF .
Liste
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