NTF3055-100T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTF3055-100T1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 35 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
Paquete / Cubierta: SOT-223
Búsqueda de reemplazo de NTF3055-100T1 MOSFET
NTF3055-100T1 Datasheet (PDF)
ntf3055-100t1 nvf3055-100.pdf

NTF3055-100,NVF3055-100Power MOSFET3.0 Amps, 60 VoltsN-Channel SOT-223http://onsemi.comDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridge3.0 A, 60 Vcircuits.RDS(on) = 110 mWFeaturesN-Channel AEC-Q101 Qualified and PPAP Capable - NVF3055-100D These Devices are Pb-Free and are RoHS Compli
ntf3055-100t.pdf

NTF3055-100Twww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 10 V 4.5RoHS10 nC COMPLIANT60APPLICATIONS0.085 at VGS = 4.5 V 3.5 Load Switches for Portable DevicesDSOT-223-3D GSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, un
ntf3055-100 nvf3055-100.pdf

NTF3055-100,NVF3055-100MOSFET Power,N-Channel, SOT-2233.0 A, 60 Vwww.onsemi.comDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridge3.0 A, 60 Vcircuits.RDS(on) = 110 mWFeatures NVF Prefix for Automotive and Other Applications RequiringN-ChannelUnique Site and Control Change Requirements; AE
ntf3055-100.pdf

NTF3055-100Preferred DevicePower MOSFET3.0 Amps, 60 VoltsN-Channel SOT-223Designed for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.3.0 A, 60 VFeatures RDS(on) = 110 mW Pb-Free Packages are AvailableN-ChannelDApplications Power Supplies ConvertersG Power Mo
Otros transistores... NTDV18N06LT4G , NTDV20N06 , NTDV20N06L , NTDV20P06L , NTDV3055L104 , NTDV5804N , NTF2955PT1G , NTF2955T1G , IRF9540N , NTF3055-160T1 , NTF3055-160T3LF , NTF3055L108T1G , NTF3055L175T1G , NTF5P03 , NTF6P02T3G , NTGD3147FT1G , NTGD3148NT1G .
History: GP2M002A060XG | SI7682DP
History: GP2M002A060XG | SI7682DP



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
irlz24n | irf620 | irfp350 | 13003 transistor | c458 transistor | 2sc1775 | 2n1305 | 2sc5242