NTF3055L175T1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTF3055L175T1G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 70 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.175 Ohm
Paquete / Cubierta: SOT-223
- Selección de transistores por parámetros
NTF3055L175T1G Datasheet (PDF)
ntf3055l175t1g.pdf

NTF3055L175Power MOSFET2.0 A, 60 V, Logic LevelN-Channel SOT-223Designed for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.2.0 AMPERES, 60 VOLTSRDS(on) = 175 mWFeatures This is a Pb-Free DeviceN-ChannelDApplications Power Supplies Converters Power Motor Contro
ntf3055l175-d.pdf

NTF3055L175Preferred DevicePower MOSFET2.0 A, 60 V, Logic LevelN-Channel SOT-223Designed for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.2.0 AMPERES, 60 VOLTSRDS(on) = 175 mWFeatures Pb-Free Packages are AvailableN-ChannelDApplications Power Supplies Converters
ntf3055l108-d.pdf

NTF3055L108Preferred DevicePower MOSFET3.0 A, 60 V, Logic Level, N-ChannelSOT-223Designed for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgehttp://onsemi.comcircuits.3.0 A, 60 VFeaturesRDS(on) = 120 mW Pb-Free Packages are AvailableApplicationsN-ChannelD Power Supplies Converters Pow
ntf3055l108t1g.pdf

NTF3055L108,NVF3055L108Power MOSFET3.0 A, 60 V, Logic Level, N-ChannelSOT-223http://onsemi.comDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridge3.0 A, 60 Vcircuits.RDS(on) = 120 mWFeatures AEC Q101 Qualified - NVF3055L108N-Channel These Devices are Pb-Free and are RoHS CompliantDAppli
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: AP09N50I-HF | OSG80R900FF | AP9563GK | HM4612 | P9515BD | IRFSL31N20DP | AOTF7N70
History: AP09N50I-HF | OSG80R900FF | AP9563GK | HM4612 | P9515BD | IRFSL31N20DP | AOTF7N70



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