NTF3055L175T1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTF3055L175T1G 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 70 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.175 Ohm
Encapsulados: SOT-223
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NTF3055L175T1G datasheet
ntf3055l175t1g.pdf
NTF3055L175 Power MOSFET 2.0 A, 60 V, Logic Level N-Channel SOT-223 Designed for low voltage, high speed switching applications in http //onsemi.com power supplies, converters and power motor controls and bridge circuits. 2.0 AMPERES, 60 VOLTS RDS(on) = 175 mW Features This is a Pb-Free Device N-Channel D Applications Power Supplies Converters Power Motor Contro
ntf3055l175-d.pdf
NTF3055L175 Preferred Device Power MOSFET 2.0 A, 60 V, Logic Level N-Channel SOT-223 Designed for low voltage, high speed switching applications in http //onsemi.com power supplies, converters and power motor controls and bridge circuits. 2.0 AMPERES, 60 VOLTS RDS(on) = 175 mW Features Pb-Free Packages are Available N-Channel D Applications Power Supplies Converters
ntf3055l108-d.pdf
NTF3055L108 Preferred Device Power MOSFET 3.0 A, 60 V, Logic Level, N-Channel SOT-223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge http //onsemi.com circuits. 3.0 A, 60 V Features RDS(on) = 120 mW Pb-Free Packages are Available Applications N-Channel D Power Supplies Converters Pow
ntf3055l108t1g.pdf
NTF3055L108, NVF3055L108 Power MOSFET 3.0 A, 60 V, Logic Level, N-Channel SOT-223 http //onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge 3.0 A, 60 V circuits. RDS(on) = 120 mW Features AEC Q101 Qualified - NVF3055L108 N-Channel These Devices are Pb-Free and are RoHS Compliant D Appli
Otros transistores... NTDV3055L104, NTDV5804N, NTF2955PT1G, NTF2955T1G, NTF3055-100T1, NTF3055-160T1, NTF3055-160T3LF, NTF3055L108T1G, 5N65, NTF5P03, NTF6P02T3G, NTGD3147FT1G, NTGD3148NT1G, 2SK1085-M, 2SK1969-01, 2SK2258, 2SK2753
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